Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Weiterbildung sichert Fachkräfte in Hightech-Unternehmen
/en/media-center/press-releases/weiterbildung-sichert-fachkraefte-in-hightech-unternehmen
Ergebnisse des AlFaClu-Projektes wurden auf der micro photonics 2016 vorgestellt und mit Vertreterinnen und Vertretern aus Wirtschaft, Wissenschaft und Politik diskutiert
Jetzt bewerben! OpTecBB Summer School
/en/events/jetzt-bewerben-optecbb-summer-school
Für die Summer School "Intelligente Sensorsysteme für autonomes Fahren" im September läuft die Bewerbungsfrist
Narrow-band single mode emission of blue-violet lasers based on GaN
/en/research/research-news/narrow-band-single-mode-emission-of-blue-violet-lasers-based-on-gan
GaN-based laser diodes emitting in the blue-violet spectral region are promising light sources for spectroscopy and atomic clocks. FBH successfully realized a stable narrow-band emission with DBR and…
Digital microwave power amplifier with energy recovery
/en/research/research-news/digital-microwave-power-amplifier-with-energy-recovery
Next-generation wireless communication infrastructure demands for high flexibility, low cost, and high efficiency. On the way to a fully digital transmitter, the FBH could achieve significant…
High-power surface-grating stabilized narrow-stripe BA lasers with beam parameter product < 2 mm×mrad
/en/research/research-news/high-power-surface-grating-stabilized-narrow-stripe-ba-lasers-with-beam-parameter-product-2-mmxmrad
The FBH has developed novel broad-area (BA) diode lasers with narrow stripes whose conversion efficiency at the operating point could be significantly increased by using an optimized vertical…
GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements
/en/research/research-news/gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
Today, GaN high electron mobility transistors (HEMTs) have demonstrated extraordinary microwave performance including high power density, high gain, and low noise.
Wissenschaftliches Kolloquium zum 60. Geburtstag von Prof. Dr. Günther Tränkle und zur Einweihung des Neubaus
/en/research/research-news/wissenschaftliches-kolloquium-zum-60-geburtstag-von-prof-dr-guenther-traenkle-und-zur-einweihung-des-neubaus
Mit einem Festkolloquium gratulierte das FBH seinem Direktor zum 60. Geburtstag und weihte ein neues Büro- und Laborgebäude ein.
frequent_07-2016_online.pdf
/fileadmin/downloads/Publications/frequent/frequent_07-2016_online.pdf
frequent Photonics for Medicine & Life Sciences W tailored semiconductor light sources – diode lasers & UV LEDs W handheld probe – bringing Raman spectroscopy out of the lab W looking into the…
FBH_Annual_Report_2014.pdf
/fileadmin/downloads/Publications/Annual-reports/FBH_Annual_Report_2014.pdf
Chaptertitle Kapitel 1 Annual Report Jahresbericht 2014 Annual Report Jahresbericht 2014 Chaptertitle Kapitel 1 Several times ‘excellent’ – this is how the international expert group assessed…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/threshold-voltage-engineering-in-gan-based-hfets-a-systematic-study-with-the-threshold-voltage-reaching-more-than-2-v
One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) in power-switching applications is obtaining enhancement mode behavior. A…