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ISPSD 2015
/en/events/ispsd-2015
At the International Symposium on Power Semiconductor Devices and ICs presents the FBH a lecture
Stabilization of passively mode-locked quantum dot lasers
/en/events/stabilization-of-passively-mode-locked-quantum-dot-lasers
Dr. Stefan BreuerTechnische Universität Darmstadt
Demonstration of GaN-based near UV laser diodes
/en/media-center/media-review/demonstration-of-gan-based-near-uv-laser-diodes-1
The Fedinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed low-threshold gallium nitride (GaN) based edge-emitting laser diodes (LDs) emitting in the near ultraviolet…
Fast, efficient switching – thanks to HiPoSwitch
/en/media-center/press-releases/fast-efficient-switching-thanks-to-hiposwitch
HiPoSwitch, an EU group-project, has successfully developed lightning-fast, high-efficiency gallium nitride power switches. These are essential for producing energy-efficient, compact, and…
Laser World of Photonics and CLEO Europe
/en/events/laser-world-of-photonics-and-cleo-europe
Visit us at the joint booth Berlin-Brandenburg in hall B3, booth 359 and at the accompanying conference.
"MINT anders" – Innovation und Experimente im Bildungssystem
/en/events/mint-anders-innovation-und-experimente-im-bildungssystem
Das FBH ist auf dem 8. MINT-Tag im Bundesministerium für Wirtschaft und Energie vertreten.
Fast, efficient switching – thanks to HiPoSwitch
/en/media-center/media-review/fast-efficient-switching-thanks-to-hiposwitch-1
Power converters use power transistor switches as key components to accomplish power conversion. Lightning-fast semiconductor switches able to operate these kinds of converters more efficiently have…
HiPoSwitch project completed with development of fast, efficient normally-off GaN-on-Si power transistors
/en/media-center/media-review/hiposwitch-project-completed-with-development-of-fast-efficient-normally-off-gan-on-si-power-transistors
Lasting from September 2011 to end-August 2014 with a budget of €5.57m (including €3.58m of funding from the European Union), the recently completed three-year project HiPoSwitch ('High Power…
EU-Projekt HiPoSwitch für GaN-Komponenten
/en/media-center/media-review/eu-projekt-hiposwitch-fuer-gan-komponenten
Im Rahmen des EU-Verbundprojektes HiPoSwitch wurden effiziente und schnelle Galliumnitrid-Leistungsschalter entwickelt. Sie sind die Basis für energiesparende, kompakte und leichte…