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"Weltcup im sonnigen Frankreich"
/en/media-center/media-review/weltcup-im-sonnigen-frankreich
Sophie Paul, Masterstudentin am FBH schreibt: "Nach der Trainingswoche in Ratzeburg mit der gesamten Mannschaft stand in dieser Woche mit dem Ruder-Weltcup ll im französischen Aiguebelette…
UV laser scribing for die separation of GaN-based lasers
/en/research/research-news/uv-laser-scribing-for-die-separation-of-gan-based-lasers
At FBH nanosecond-pulsed laser radiation (pulse length < 30 ns) with a wavelength of 355 nm is successfully used to scribe the material followed by cleaving. At 355 nm GaN absorbs,…
Growth and FTIR Characterization of Two-Dimensional Hexagonal Boron Nitride on Metal Substrates
/en/events/growth-and-ftir-characterization-of-two-dimensional-hexagonal-boron-nitride-on-metal-substrates
Boris FeigelsonNaval Research Laboratory, USA
Wide Bandgap Semiconductor and Components Workshop
/en/events/wide-bandgap-semiconductor-and-components-workshop
FBH at the 7th Wide Bandgap Semiconductor and Components Workshop
75 mOhm / 600 V normally-off switching transistors on SiC and Si substrates
/en/research/research-news/75-mohm-600-v-normally-off-switching-transistors-on-sic-and-si-substrates
GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. The FBH has now successfully transferred its 600 V technology for normally-off…
Digital Doherty Tx for Future SDR Mobile Infrastructures
/en/research/research-news/digital-doherty-tx-for-future-sdr-mobile-infrastructures
Digital power amplifier (PA) concepts are highly attractive, especially when it comes to optimizing wireless infrastructure. Processing all signals digitally up to the final stage would simplify the…
UV-Halbleiterlasersysteme für lithographische Anwendungen
/en/media-center/media-review/uv-halbleiterlasersysteme-fuer-lithographische-anwendungen
Mit der rasanten Entwicklung von Galliumnitrid-basierten Halbleiterlasern, ergibt sich die Möglichkeit einer kompakten und wartungsarmen Laserlichtquelle hoher Brillanz im nahen UV.
International Semiconductor Laser Conference
/en/events/international-semiconductor-laser-conference-1
Meet FBH scientists at the ISLC 2014.
A new approach for characterizing semiconductor laser diodes using LCR Impedance analyzer
/en/events/a-new-approach-for-characterizing-semiconductor-laser-diodes-using-lcr-impedance-analyzer
Dr. Ding LiPeking University