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Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitations
/en/media-center/media-review/gate-dielectric-in-gan-based-metal-oxide-semiconductor-high-electron-mobility-transistors-an-overview-on-technology-issues-and-limitations
Mattia CapriottiTU Wien
Die Anwendung gleich mitdenken: das FBH als Start-up-Schmiede
/en/media-center/media-review/die-anwendung-gleich-mitdenken-das-fbh-als-start-up-schmiede
Günther Tränkle talks about FBHs start-up activities.
Laser sources for atom interferometry in space
/en/research/research-news/laser-sources-for-atom-interferometry-in-space
Outer space offers optimum conditions for quantum optical experiments, since zero gravity is ideally suited to meet the stringent requirements on measurement accuracy and precision. However, until…
Kompakt und kostengünstig
/en/media-center/media-review/kompakt-und-kostenguenstig
Das Diodenlaser-Modul aus der Berliner InnoProfile-Transfer-Initiative "YELLOW" beherbergt einen Laserchip, Mikrolinsen und einen Kristall.
ESSDERC 2014
/en/events/essderc-2014
FBH presents the HIPOSWITCH project at the European Solid-State Device Conference
European Microwave Week
/en/events/european-microwave-week-1
FBH presents new research results at the European Microwave Week
ECS & SMEQ Joint International Meeting
/en/events/ecs-amp-smeq-joint-international-meeting
FBH at the Joint International Meeting of the Electrochemical Society and the Sociedad Mexicana de Electroquímica
UV LEDs with dominant emission at wavelengths <240 nm
/en/research/research-news/uv-leds-with-dominant-emission-at-wavelengths-lt240-nm
By using a new heterostructure design and carefully optimizing the corresponding semiconductor structures FBH and TU Berlin succeeded to fabricate UV LEDs with a dominant emission wavelength <240…
TechnologieTransferTag Berlin-Brandenburg
/en/events/technologietransfertag-berlin-brandenburg
Entrepreneurs meet scientists to establish cooperation partnerships.