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Laser-assisted fabrication of vertical interconnects for AlGaN/GaN power transistors
/en/research/research-news/laser-assisted-fabrication-of-vertical-interconnects-for-algangan-power-transistors
Vertical integration plays a key role with regard to the increasing integration density of electronic devices. Vertical interconnect accesses (VIAs) from the device’s front through the substrate…
High-voltage lateral GaN Schottky diodes for high-speed power switching applications
/en/research/research-news/high-voltage-lateral-gan-schottky-diodes-for-high-speed-power-switching-applications
Highly efficient electrical power converters are indispensible for ecology-minded future electronic systems. Thus, Schottky diodes with lateral device topology have been developed at FBH which fully…
Ihr Tag müsste 30 Stunden haben
/en/media-center/media-review/ihr-tag-muesste-30-stunden-haben
Katrin Paschke: GDR champion in track and field athletics. Research group leader for hybrid diode laser systems. Black belt in in Takwondo. Two children. How this matches? A teaching play in…
New THz on-wafer measurement facility enables FBH to measure frequencies up to 500 GHz
/en/research/research-news/new-thz-on-wafer-measurement-facility-enables-fbh-to-measure-frequencies-up-to-500-ghz
FBH acquired a new semi-automatic on-wafer characterization system enabling 500 GHz measurements. This system is ideally suited for on-wafer characterization in the frequency range beyond 100…
AlN layers with low dislocation density for UV LEDs
/en/research/research-news/aln-layers-with-low-dislocation-density-for-uv-leds
FBH managed to reduce the dislocation density of AlN by more than one order of magnitude by the epitaxial lateral overgrowth of patterned AlN layers. Thus, the dislocation density of AlN layers can…
GaN HFETs with high current and high breakdown voltage using Si-doped AlGaN back barrier
/en/research/research-news/gan-hfets-with-high-current-and-high-breakdown-voltage-using-si-doped-algan-back-barrier
With a thin n-doped AlGaN layer under the channel FBH scientists significantly improved the trade-off between on-state resistance and breakdown voltage of GaN HFETs for power switching applications.
OpTecBB welcomes 100. member
/en/media-center/press-releases/optecbb-welcomes-100-member
With First Sensor AG, the Berlin-Brandenburg OpTecBB network for optical technologies welcomes its 100. member.
Nach Geldern forschen
/en/media-center/media-review/nach-geldern-forschen
Every year, the regions receive billions of Euros from EU subsidy funds. Berlin also competes in Brussles for these financial resources. Thus, Günther Tränkle, as part of a Berlin delegation and…
Rauchiger Sommer
/en/media-center/media-review/rauchiger-sommer
Klaus Wowereit on campaign trail in Berlin - inter alia in the technology park Adlershof.
Miniaturized External Cavity Diode Lasers emitting at 633 nm are best suited for application in absolute distance interferometry and atomic spectroscopy
/en/research/research-news/miniaturized-external-cavity-diode-lasers-emitting-at-633-nm-are-best-suited-for-application-in-absolute-distance-interferometry-and-atomic-spectroscopy
For interferometric measurement and atomic spectroscopy, a micro-integrated, tunable external cavity diode laser (ECDL) with a reflection Bragg grating has been developed at FBH. The single-mode, …