Humboldt awardee Prof. Russell Dupuis is visiting scientist at FBH

For his pioneering work in the field of materials research, in particular the epitaxy of III-V semiconductor nanostructures, Prof. Russell Dupuis has been honored with the Humboldt Research Award. The award is linked to a research stay at Technische Universität Berlin and Ferdinand-Braun-Institut. Prof. Dupuis was the first to develop high-performance metalorganic chemical vapor deposition (MOCVD) epitaxial growth systems for III-V compound semiconductors. He also demonstrated the first III-V solar cells and laser diodes grown by MOCVD. Today, this process is applied world-wide for the large-scale production of visible LEDs, high-speed optical communication system components, and solar cells. Prof. Dupuis holds the prestigious Steve W. Chaddick chair at the School of Electrical and Computer Engineering of Georgia Institute of Technology, Atlanta (USA) and is head of the Center for Compound Semiconductors. His stay at FBH and TU Berlin is scheduled until July. A follow up visit is planned for 2015.

The joint research project aims at developing ultraviolet (UV) laser diodes based on AlGaN quantum wells as well as MOCVD growth of GaN quantum dot structures. UV laser diodes are used in sensors, rapid prototyping (e.g., 3D  printing), and in medical technology (e.g., flow cytometry, fluorescence spectroscopy). GaN quantum dots are the basis for single photon emitters, which are necessary for secure data transmission via quantum cryptography.

On March 28, 2014, Prof. Russell Dupuis will hold a lecture on “III-N Wide-Bandgap NPN Heterojunction Bipolar Transistors and PIN Avalanche Photodiodes” within the FBH seminar series.

FBH news: 18.03.2014