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GaN-HEMTs in Envelope Tracking systems for telecommunications
/en/research/research-news/gan-hemts-in-envelope-tracking-systems-for-telecommunications
The most power-hungry components in mobile base stations are microwave power amplifiers. Situation becomes even worse for modern modulation techniques such as WiMAX and LTE, because then they need to…
Assessment of real wafer temperature of GaN/Saphir with new in-situ sensor
/en/research/research-news/assessment-of-real-wafer-temperature-of-gansaphir-with-new-in-situ-sensor
Increasingly, sapphire substrate with a larger diameter are used for GaN-LEDs leading to a wafer bow during the growth processes of several 100 µm. This affects the temperature of the wafer…
Hinter Gittern – mehr Brillanz für rote Laser
/en/media-center/press-releases/hinter-gittern-mehr-brillanz-fuer-rote-laser
Red laser light is used in various applications: with it, distances can be measured very precisely, holographic images can be generated, and specific spectroscopic measurements can be executed.…
Quantenmechanik in eisiger Kälte
/en/media-center/press-releases/quantenmechanik-in-eisiger-kaelte
Within the EU joint project iSense, the Ferdinand-Braun-Institut (FBH) is developing a prototype of a portable integrated quantum sensor based on ultra-cold atoms. This device could measure, for…
Beam characterization for single-mode fiber coupling of tapered lasers
/en/research/research-news/beam-characterization-for-single-mode-fiber-coupling-of-tapered-lasers
Tapered lasers show a high market potential for industrial applications. However, for many applications it is necessary to transport the beam using single-mode fibers. As tapered lasers feature a…
Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
/en/research/research-news/highly-reliable-silicon-carbide-photodiodes-for-visible-blind-ultraviolet-detector-applications
A growing variety of applications for detectors of UV radiation depend on highly reliable and long-term stable detection systems. In a joint project of FBH, IKZ, and sglux highly efficient and…
Reduced dynamic on-state resistance for GaN power transistors
/en/research/research-news/reduced-dynamic-on-state-resistance-for-gan-power-transistors
GaN-based high-voltage switching transistors enable particularly efficient power converters. Due to lower losses per switching cycle, GaN-based converters can operate at higher frequencies than…
Hochleistungslaserdioden aus Berlin auf der MST-Sommeruni
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For five days, the summer school of the Centre for Microsystems Technology (ZEMI) in Berlin offers trends and current developments from microsystems technology and optoelectronics. Also involved is…
FBH publication chosen for IOP select and labtalk
/en/media-center/media-review/fbh-publication-chosen-for-iop-select-and-labtalk
A publication of P. Crump and further autors from the FBH has been selected for IOP Select and labtalk. The special collection contains journal articles, chosen by IOP editors according to criteria…
Identifying the limits to optical brilliance in high power broad area diode lasers
/en/media-center/media-review/identifying-the-limits-to-optical-brilliance-in-high-power-broad-area-diode-lasers
A team from Germany provide new information on the character of the guided modes of a high power broad area diode laser that will help to design technology to improve the beam quality of such…