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Frequency-Stabilized Diode Lasers
/en/research/photonics/chips-laser-leds/frequency-stabilized-lasers
A narrow linewidth of the emitted laser radiation is of interest for a variety of applications. These include frequency-stabilized diode lasers used in spectroscopy, nonlinear frequency conversion…
Tunable & Dual-Wavelength Diode Lasers
/en/research/photonics/chips-laser-leds/tunable-dual-wavelength-lasers
Tunable lasers emitting in the near infrared are needed for a wide variety of applications. These include absorption spectroscopy, biomedical imaging, and nonlinear frequency conversion. The basis…
Pulsed Diode Lasers
/en/research/photonics/chips-laser-leds/pulsed-lasers
We develop customized diode lasers that can generate short (µs) to ultrashort (ps) laser pulses. Such pulses are needed for a variety of applications such as material and bioanalysis, free space…
Gallium-Nitride Diode Lasers
/en/research/photonics/chips-laser-leds/gan-diode-lasers
We develop diode lasers based on the (InAlGa)N material system. We specifically tune their properties to the respective field of application - such as atomic spectroscopy or atomic clocks for…
InP Ultra-Broadband Components
/en/research/iii-v-electronics/terahertz-components-modules/inp-ultra-broadband-components
We develop ultra-wideband traveling-wave amplifiers (TWA) and wideband transimpedance amplifiers (TIA) with excellent characteristics. They are realized using our transfer substrate InP-DHBT…
Power Electronic Devices with Wide-Bandgap Semiconductors
/en/research/iii-v-electronics/technologies-processes/microwave-power-devices
We have developed a GaN device process for power-electronic transistors and half-bridges and operate a process technology for normally-off 650 V GaN switching transistors. Contact Dr.…
Velektronik | Trustworthy Electronics
/en/research/iii-v-electronics/technologies-processes/velektronik-trustworthy-electronics
The overall objective of the Velektronik project is to create a platform for "trustworthy electronics", in order to strengthen technological sovereignty for German industry and the public sector.…
Indium Phosphide HBT Process
/en/research/iii-v-electronics/technologies-processes/inp-hbt-process
InP HBT Technology for THz Applications flyer (pdf) The terahertz region (0.1 - 3 THz) is located in the electromagnetic spectrum below the optical frequencies. To date, the terahertz band…
Fast Switching GaN Power Cores
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/fast-switching-gan-power-cores
400V/10A high-speed GaN half-bridge module data sheet (pdf) frequent – Wide bandgap devices & modules for efficient power electronics (pdf) Lateral GaN transistors feature very high cut-off…
GaN Power Converters
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/gan-power-converters
Demonstrating the potential of our GaN power-switching transistors is one of the targets of the Joint Lab Power Electronics that is run jointly by Technische Universität Berlin and FBH. Contact …