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Process Technology Department
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We process wafers from 2" to 100 mm and different substrates (GaAs, InP, Si, SiC, sapphire, GaN) with high reproducibility. With modern process equipment equipped to industrial standards, we…
Materials Technology Department
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Materials technology is the starting point to realize new concepts for optoelectronic and electronic devices. As a center of competence for metalorganic vapor phase epitaxy (MOVPE), the Materials…
III-V Technology
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In our III-V technology research area, we bundle know-how and resources in materials, process technology, and mounting and assembling technology. These form the basis for subsequent device…
Joint Lab Power Electronics
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The Joint Lab Power Electronics is a cooperation of FBH with the Department of Power Electronics at the Institute of Energy and Automation Technology at TU Berlin. Here, we crosslink technological…
Microwave Department
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In the Microwave Department, we research the cross-sectional topics and tools required for the development of microwave circuits and modules and make them available to the labs. This comprises…
Joint Lab InP Devices
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Technically, the terahertz range (0.1 - 3 THz) in the electromagnetic spectrum below the optical frequencies is currently largely unexplored. Electronic components beyond 100 GHz are…
Joint Lab THz Components & Systems
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In our Joint Lab THz Components & Systems we are working on terahertz technologies targeting components and systems for 6G wireless communications and sensing. The focus of our work in the…
Joint Lab BTU-CS – FBH Microwave
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In this Joint Lab, FBH cooperates with the group of Matthias Rudolph, holder of the Ulrich-L.-Rohde Stiftungsprofessur für Hochfrequenz- und Mikrowellentechnik at the Brandenburg University of…
Digital PA Lab
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In the Digital PA Lab, we develop novel digital modulation schemes and amplifier topologies optimized for operation as power amplifier ICs and modules for the microwave range. We use both GaN-HEMT…
RF Power Lab
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The focus of our RF Power Lab is on applications with output powers in the range of 10...200 W in the microwave range below 12 GHz. Most projects use FBH packaged GaN HEMT transistors with 0.5 µm…