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Search results 2301 until 2310 of 4104

Enabling quantum technologies on nanosatellites – micro-integrated optical frequency reference based on rubidium vapor

/en/research/research-news/enabling-quantum-technologies-on-nanosatellites-micro-integrated-optical-frequency-reference-based-on-rubidium-vapor

Integrating a DFB diode laser and a rubidium vapor cell led to one of the most compact and stable optical frequency references of this type. The 70 × 26 × 19 mm³ system…

Optimization of Te-doped GaAs tunnel junctions for stacking of multiple laser sections

/en/research/research-news/optimization-of-te-doped-gaas-tunnel-junctions-for-stacking-of-multiple-laser-sections

The FBH has investigated the thermal stability of tellurium (Te) as donor in GaAs during further growth at high temperatures. These studies have enabled laser diodes with stacked active regions…

International Semiconductor Laser Conference To Be Held In Germany

/en/media-center/media-review/international-semiconductor-laser-conference-to-be-held-in-germany

Berlin-based Ferdinand-Braun-Institut (FBH) will host the International Semiconductor Laser Conference (ISLC) as a hybrid event in Potsdam from October 10 to 14, 2021.

Highly linear MMIC amplifiers with beyond 1.75 THz gain-bandwidth product

/en/research/research-news/highly-linear-mmic-amplifiers-with-beyond-175-thz-gain-bandwidth-product

The FBH has developed ultra-wideband MMIC amplifiers with a record gain-bandwidth product of beyond 1.75 THz. They are based on the institute’s InP DHBT technology and provide a very high output…

Superior output power – up to 7 W from 783 nm wavelength-stabilized DBR tapered laser diodes

/en/research/research-news/superior-output-power-up-to-7-w-from-783-nm-wavelength-stabilized-dbr-tapered-laser-diodes

The FBH has developed and fabricated tapered laser diodes with excellent features, suited e.g. for novel Raman imaging techniques. The devices are based on an established vertical structure and offer…

Extended capabilities – novel ion implanter starts operation

/en/research/research-news/extended-capabilities-novel-ion-implanter-starts-operation

The new medium-current implanter system in FBH’s cleanroom allows an implantation energy up to 500.000 V, a beam current of up to 2 mA and using various ion sources. It also comprises a…

High-performance ion implantation – the basis for innovative semiconductor devices

/en/media-center/press-releases/high-performance-ion-implantation-the-basis-for-innovative-semiconductor-devices

The Berlin-based Ferdinand-Braun-Institut (FBH) recently put a sophisticated ion implanter system from High Voltage Engineering Europa B.V. into operation.

Photonics Days Berlin Brandenburg 2021

/en/events/photonics-days-berlin-brandenburg-2021

FBH takes part in the conference

ISLC 2021

/en/events/islc-2021

FBH organizes the 27th International Semiconductor Laser Conference - ISLC 2021, which will be held in Potsdam.

Book a scientist

/en/events/book-a-scientist

Was Diamanten mit Quantentechnologien zu tun haben? Das erklärt Tim Schröder vom FBH bei book a scientist. Jetzt virtuelles Date für den 18.3 sichern + mehr über die Technologie mit Glamourfaktor…