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InP-on-BiCMOS Heterointegration
/en/research/iii-v-electronics/technologies-processes/inp-bicmos-heterointegration
For system integration, terahertz circuits must be realized and connected , for example, to antenna structures. These structures and interconnections must maintain the highest possible bandwidth,…
Power Electronic Characterization
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/power-electronic-characterization
We develop power semiconductor devices in GaN, AlN and Ga2O3 within the framework of our Joint Lab Power Electronics that we operate jointly with the Chair of Power Electronics of the Technische…
Gallium Oxide Power Transistors
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/gallium-oxide-power-transistors
frequent - wide bandgap devices frequent – Wide bandgap devices & modules for efficient power electronics (pdf) Due to the increasing demands on higher dielectric strengths of electronic…
Lateral AlN Transistors
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/lateral-aln-transistors
GaN-based switching transistor for power-electronic applications have not yet reached their material limits with respect to on-state resistance for a given blocking voltage. One major reason are…
Vertical GaN Transistors
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/vertical-gan-transistors
Wide bandgap devices & modules for efficient power electronics Power semiconductor devices are utilized in power conversion systems and as drivers for high power optical laser systems. For…
Lateral GaN Transistors & Half Bridges
/en/research/iii-v-electronics/gan-aln-gao-based-power-electronics/lateral-gan-transistors-half-bridges
Lateral GaN-based transistors (AlGaN/GaN HEMTs) use a two-dimensional electron gas (2DEG) as transistor channel. They enable efficient power converters with particularly high power density. Very…
InP HBT Transceivers
/en/research/iii-v-electronics/terahertz-components-modules/inp-hbt-transceivers
Electronic component and system design FBH has established a joint laboratory Goethe-Leibniz-Terahertz-Center with Goethe University Frankfurt and foundry activities with Leibniz-Institut für…
EM Field-Simulations
/en/research/iii-v-electronics/rf-competence-applications/em-field-simulations
Calculation of electromagnetic fields
Radar Detectors
/en/research/iii-v-electronics/transmitters-receivers/radar-detectors
Current project Current project Ultra-Low-Power Mobile Radar for Medical Applications Demonstration of a mobile and compact radar system will be developed for cardiovascular monitoring at…
Digital Transmitters
/en/research/iii-v-electronics/transmitters-receivers/digital-transmitters
At FBH, new amplifier designs are developed and existing ones are used to produce integrated power amplifier circuits and modules. These are used for e. g. satellites, base stations and measurement…