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Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect
/en/research/publications/dynamic-rd-modeling-by-exploiting-gate-current-dependency-of-virtual-gate-effect
This paper proposes a new method for compact modeling the virtual gate effect by adapting the gate current in the extraction procedure. Drain resistance (RD) of gallium nitride (GaN)…
On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier
/en/research/publications/on-the-survivability-of-a-28-32-ghz-gan-low-noise-amplifier
This paper presents a 28 - 32 GHz 2-stage low noise amplifier (LNA). The LNA was designed and fabricated using Ferdinand-Braun-Institut’s (FBH) 0.15 µm GaN on SiC process. Three samples of…
Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition
/en/research/publications/compact-stacked-rugged-gan-low-noise-amplifier-mmic-under-input-power-overdrive-condition
Rugged GaN HEMT LNAs are well established in the receive path of T/R front ends. In order to further enhance the ruggedness against high input powers, stacked transistors can be used in the first…
Interlaboratory Investigation of On-wafer S-parameter Measurements from 110 GHz to 1.1 THz
/en/research/publications/interlaboratory-investigation-of-on-wafer-s-parameter-measurements-from-110-ghz-to-11-thz
This paper presents an interlaboratory comparison of on-wafer S-parameter measurements of coplanar waveguide (CPW) devices in the frequency range of 110 GHz to 1.1 THz. The comparison was…
Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-End
/en/research/publications/common-gate-lna-mmic-with-switching-feature-using-gan-hemt-for-5g-rf-front-end
This letter presents a novel three-stage gallium nitride (GaN)-HEMT low-noise amplifier (LNA) with an integrated switch. It is intended to replace the combination of the antenna switch and the LNA,…
Precise Modeling of Coplanar Device Measurements Under Realistic Conditions up to G-Band
/en/research/publications/precise-modeling-of-coplanar-device-measurements-under-realistic-conditions-up-to-g-band
Coplanar devices are being used in many new applications, from next-generation (6G) wireless communication systems to autonomous driving and radar sensors. Often they are the building blocks of…
Pursuing innovative approaches for AM applications, based on latest progress in direct diode technology, e.g. 780 nm for aluminum processing
/en/research/publications/pursuing-innovative-approaches-for-am-applications-based-on-latest-progress-in-direct-diode-technology-eg-780-nm-for-aluminum-processing
Pursuing innovative approaches for AM applications, based on latest progress in direct diode technology, e.g. 780 nm for aluminum processing H. Alder1, U. Elliesen1, A. Knaub1,…
Effective Separation of Raman Signals from Fluorescence Interference in Undyed and Dyed Textiles Using Shifted Excitation Raman Difference Spectroscopy (SERDS)
/en/research/publications/effective-separation-of-raman-signals-from-fluorescence-interference-in-undyed-and-dyed-textiles-using-shifted-excitation-raman-difference-spectroscopy-serds
Textiles are an integral part of our everyday lives, e.g., in the form of clothing and furniture. Consequently, their analysis is of great interest in a wide range of application areas including…
Shifted excitation Raman difference spectroscopy for soil component identification and soil carbonate determination in the presence of strong fluorescence interference
/en/research/publications/shifted-excitation-raman-difference-spectroscopy-for-soil-component-identification-and-soil-carbonate-determination-in-the-presence-of-strong-fluorescence-interference
Detailed knowledge about soil composition is an important prerequisite for many applications, for example precision agriculture. Current standard laboratory methods are complex and time-consuming but…
Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC Technology
/en/research/publications/highly-robust-gan-power-amplifier-at-millimeter-wave-frequencies-using-sputtered-iridium-gate-mmic-technology
This article presents the application of FBH’s sputtered Iridium (Ir) gate technology for the design and realization of a highly robust power amplifier (PA) intended for satellite communication…