1. Research
  2. Publications
  3. On the Survivability of a 28 - ...


Find scientific contributions

to conferences also on our events page.

On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier

S. Haque1, C. Andrei1, H. Yazdani2, M. Rudolph1,2

Published in:

Proc. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Berlin, Germany, Sep. 18-19, ISBN: 978-2-87487-073-6, pp. 17-20 (2023).


This paper presents a 28 - 32 GHz 2-stage low noise amplifier (LNA). The LNA was designed and fabricated using Ferdinand-Braun-Institut’s (FBH) 0.15 µm GaN on SiC process. Three samples of LNAs were characterized showing a small-signal gain of 15.3 - 16.3 dB and noise figure of 2.8 - 3.2 dB within the bandwidth. The input and output reflection coefficients are found to be better than −7.4 dB and −9.5 dB, respectively. The LNA samples were stressed with an input power up to 34.4 dBm at 30 GHz CW. Post-stress measurements reveal only a threshold shift in the first stage transistor without any significant change in the small-signal and noise performance.

1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Germany
2 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Germany


low noise amplifier, GaN HEMT, Ka-band, mm-wave, robustness.

Copyright © 2023 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Full version in pdf-format.