Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition
E. Kaule1, P. Luo1,2, S.A. Chevtchenko3, M. Rudolph1,3, C. Andrei1
Published in:
Proc. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Berlin, Germany, Sep. 18-19, ISBN: 978-2-87487-073-6, pp. 9-12 (2023).
Abstract:
Rugged GaN HEMT LNAs are well established in the receive path of T/R front ends. In order to further enhance the ruggedness against high input powers, stacked transistors can be used in the first stage of the LNA. This work aims to prove that the stack achieves 2W higher ruggedness relative to a standard LNA while preserving competitive small-signal properties, especially low noise figure. Therefore, we present the measured small-signal parameters and the stress measurements under high input powers of a stacked GaN LNA MMIC, combining a low noise figure around 2.6 dB in C-band with a ruggedness, that is verified up to an input power of 40 dBm.
1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair for RF and Microwave Techniques, Germany
2 now with Chengdu DanXi Technology Co. Ltd., China
3 Ferdinand-Braun-Institut (FBH), Germany
Keywords:
GaN, HEMT, low-noise amplifier, LNA, MMIC, ruggedness, overdrive condition, receiver.
Copyright © 2023 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
Full version in pdf-format.