Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Aspects and Applications of Thermal Waveguiding
/en/events/aspects-and-applications-of-thermal-waveguiding
Philipp Hildenstein Ferdinand-Braun-Institut
Thomas Flisgen appointed Professor of Electromagnetic Field Theory at BTU Cottbus-Senftenberg
/en/media-center/press-releases/thomas-flisgen-appointed-professor-of-electromagnetic-field-theory-at-btu-cottbus-senftenberg
Dr.-Ing. Thomas Flisgen has been appointed as Professor of Electromagnetic Field Theory at the Brandenburg University of Technology Cottbus-Senftenberg (BTU) starting in the winter semester of…
Ultra-stable optical systems for mobile atomic quantum technologies – publication in Optics Express selected as Editor's Pick
/en/media-center/press-releases/ultra-stable-optical-systems-for-mobile-atomic-quantum-technologies-publication-in-optics-express-selected-as-editors-pick
Our recent publication, "Micro-integrated crossed-beam optical dipole trap system with long-term alignment stability for mobile atomic quantum technologies," has been selected as an Editor's Pick in…
Superior performance of a single-wavelength high-power DFB laser
/en/research/research-news/superior-performance-of-a-single-wavelength-high-power-dfb-laser
We’ve developed a 780 nm distributed feedback laser which, by design, provides mode-hop free tuning over a wide range of currents and temperatures. It can serve as an enabling component for more…
Deep-UV Light for Antiseptics & Hygiene
/en/events/deep-uv-light-for-antiseptics-hygiene
The FBH will participate in this year's Deep-UV Light for Antiseptics & Hygiene Symposium with a talk.
Fusion at Lawrence Livermore
/en/events/fusion-at-lawrence-livermore
Will Fenwick Lawrence Livermore Labs, USA
226 nm Far-Ultraviolet-C Light Emitting Diodes with an Emission Power over 2 mW
/en/research/publications/226-nm-far-ultraviolet-c-light-emitting-diodes-with-an-emission-power-over-2-mw
Far-ultraviolet-C (far-UVC) light emitting diodes (LED) emitting at an emission wavelength of 226 nm with different n-AlGaN contact layers, quantum well barriers, and quantum well numbers are…
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
/en/research/publications/gan-drift-layers-on-sapphire-and-gan-substrates-for-12kv-class-vertical-power-devices
The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low-cost sapphire substrates is presented in comparison to…
Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology
/en/research/publications/switch-integrated-ka-band-low-noise-amplifier-in-ganaln-hemt-technology
This paper presents low noise amplifiers (LNA) with integrated DC and RF switching features for multifunctional single chip RF front end (RFFE) applications. Two 28–32 GHz LNAs, with and without…
Prediction of the Large-Signal GaN HEMT Performance Using Accurate TCAD-Compact Modeling Method
/en/research/publications/prediction-of-the-large-signal-gan-hemt-performance-using-accurate-tcad-compact-modeling-method
Accurate prediction of the large-signal power performance of gallium nitride (GaN) high electron mobility transistors (HEMTs) can be achieved by combining TCAD device modeling with the RF simulations…