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Targeting 6G applications in the sub-THz range – advanced InP bipolar transistor process
/en/research/research-news/targeting-6g-applications-in-the-sub-thz-range-advanced-inp-bipolar-transistor-process
Joint research activities between University of Duisburg-Essen and FBH yield improved performance of InP-based technologies. These rely on optimized epitaxial material and novel process techniques.…
AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique
/en/research/publications/aes-depth-profiling-of-semiconducting-epitaxial-layers-with-thicknesses-in-the-nanometre-range-using-an-ion-beam-bevelling-technique
An ion beam technique has been developed that allows the preparation of bevels from semiconducting hetero-epitaxial structures with smooth surfaces and very shallow angles between 0.1° and…
Eigen mode solver for microwave transmission lines
/en/research/publications/eigen-mode-solver-for-microwave-transmission-lines
The electromagnetic properties of microwave transmission lines can be described using Maxwell’s equations in the frequency domain. Applying a finite-volume scheme results in an algebraic eigenvalue…
Ticket zum neuen Job in der Wahlheimat
/en/media-center/media-review/ticket-zum-neuen-job-in-der-wahlheimat
Als einzigartiges Erfolgsprojekt, das sich permanent am aktuellen Bedarf der Unternehmen orientiert und sich durch seine sehr große Nähe zum Arbeitsmarkt auszeichnet, charakterisierte der Vorsitzende…
SiGe MMIC’s - on the Current State-of-the-Art
/en/research/publications/sige-mmics-on-the-current-state-of-the-art
In recent years, the frequency limits of SiGe Heterostructure Bipolar Transistors (HBTs) have been extended to frequencies above 50 GHz. This opens new perspectives for Si-based monolithic…
Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes
/en/research/publications/stable-operation-of-ingaasingapalgaas-lambda-1020-nm-laser-diodes
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of…
Nonlinear modeling of SiGe HBTs up to 50 GHz
/en/research/publications/nonlinear-modeling-of-sige-hbts-up-to-50-ghz
A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted…
FDTD Analysis of Submillimeter-Wave CPW with Finite-Width Ground Metallization
/en/research/publications/fdtd-analysis-of-submillimeter-wave-cpw-with-finite-width-ground-metallization
The dispersion and attenuation characteristics of conductor-backed coplanar transmission lines with finite-width ground metallizations are studied in the frequency range up to 1 THz. The…
A physics-based model of hyperabrupt varactors for nonlinear transmission line applications
/en/research/publications/a-physics-based-model-of-hyperabrupt-varactors-for-nonlinear-transmission-line-applications
This article presents a physics-based varactor-diode model for exponentially graded doping profiles. The capacitance–voltage characteristic and the bias dependence of the series resistance are…
Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium
/en/research/publications/low-dispersion-thin-film-microstrip-lines-with-cyclotene-benzocyclobutene-as-dielectric-medium
We report on thin-film microstrip lines (TFMSLs) fabricated on low-resistivity Si with polymerized cyclotene as the dielectric between signal and ground conductor, all on top of the wafer.…