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European Microwave Week 2019
/en/events/european-microwave-week-2019
Visit us at EuMW at the conference and at the joint booth of Research Fab Microelectronics Germany.
Gallium oxide power transistors said to achieve record values
/en/media-center/media-review/gallium-oxide-power-transistors-said-to-achieve-record-values
Researchers from Germany’s Ferdinand-Braun-Institut (FBH) have made a breakthrough in their development of transistors based on gallium oxide (ß-Ga2O3), achieving high breakdown voltage combined with…
Manufacturing Bits: Modeling SiC defects; gallium oxide MOSFETs; AIN lab
/en/media-center/media-review/manufacturing-bits-modeling-sic-defects-gallium-oxide-mosfets-ain-lab
The Berlin-based Ferdinand-Braun-Institut has developed what the research organization says are gallium oxide power transistors with record values.
Gallium-Oxide Power MOSFET Handles 155 MW/cm²
/en/media-center/media-review/gallium-oxide-power-mosfet-handles-155-mwcm2
The Ferdinand Braun Institute has developed a lateral power transistor that achieves a power density of 155 MW/cm² at a breakdown voltage of 1.8 kV. The breakdown field strength reaches 1.8 MV/cm to…
Ferdinand-Braun-Institut Researchers Create Gallium Oxide Power Transistors with Record Values
/en/media-center/media-review/ferdinand-braun-institut-researchers-create-gallium-oxide-power-transistors-with-record-values
The Ferdinand-Braun-Institut (FBH) recently announced a breakthrough with transistors based on gallium oxide (ß-Ga2O3).
Feldeffekttransistor mit Rekordwerten
/en/media-center/media-review/feldeffekttransistor-mit-rekordwerten
Leistungstransistor aus Galliumoxid wartet mit sehr hohen Durchbruchspannungen und niedrigen Widerständen auf.
FBH reports gallium oxide power transistors with record values
/en/media-center/media-review/fbh-reports-gallium-oxide-power-transistors-with-record-values
The Ferdinand-Braun-Institut (FBH) has achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect…
Galliumoxid-Leistungstransistor mit Rekordwerten entwickelt
/en/media-center/media-review/galliumoxid-leistungstransistor-mit-rekordwerten-entwickelt
Das Ferdinand-Braun-Institut hat ß-Ga2O3-MOSFETs (Metall-Oxid-Halbleiter-Feldeffekttransistor) mit einer Durchbruchspannung von 1,8 kV und einer Leistung von 155 MW pro cm2 entwickelt. Die…
Gallium oxide power transistors achieve record values
/en/media-center/media-review/gallium-oxide-power-transistors-achieve-record-values
Researchers at the Leibniz-Institut für Höchstfrequenztechnik (Berlin) have developed a novel type of MOSFETs based on gallium oxide (ß-Ga2O3), with breakthrough characteristics.
Gallium oxide power transistors with record values
/en/media-center/media-review/gallium-oxide-power-transistors-with-record-values-2
The Ferdinand-Braun-Institut (FBH) has announced that it has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3)