Ferdinand-Braun-Institut Researchers Create Gallium Oxide Power Transistors with Record Values

 The Ferdinand-Braun-Institut (FBH) recently announced a breakthrough with transistors based on gallium oxide (ß-Ga₂O₃). The ß-Ga₂O³-MOSFETs provide a high breakdown voltage as well as high current conductivity, while offering a breakdown voltage of 1.8 kilovolts and a power figure of merit of 155 megawatts per square centimeter.
more...