Vas.P. Kunets1, U. Müller1, J. Dobbert1, R. Pomraenke1, G.G. Tarasov1, W.T. Masselink1, H. Kostial2, H. Kissel3, Yu.I. Mazur4
Published in:
J. of Appl. Phys., vol. 94, no. 12, pp. 7590-7593 (2003).
Abstract:
The generation–recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noisespectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al0.30Ga0.70As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ0≃1×10−11 cm2, and a total integrated defect concentration of about Nts≃1.4×1010 cm−2.
1 Department of Physics, Humboldt-Universität zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany
2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany
4 Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
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