Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

H. Wenzel, A. Maaßdorf, C. Zink, D. Martin, M. Weyers, A. Knigge

Published in:

Electron. Lett., vol. 57, no. 11, pp. 445-447, doi:10.1049/ell2.12162 (2021).

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Abstract:

A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third-order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm2. The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm-1. The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany