Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm
IEEE Photonics Technol. Lett., vol. 32, no. 1, pp. 59-62 (2020).
Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
In this work, we present the design and performance of a monolithic master oscillator tilted tapered power amplifier emitting at 1060 nm. The device consists of three sections: a
2 mm long ridge waveguide (RW) master oscillator (MO) section with two surface distributed Bragg reflection (DBR) mirrors, a 0.5 mm long bent RW control (CON) section and a 3.5 mm long tapered power amplifier (TTPA) section tilted by 4°. With this design, unwanted back reflection from the front facet of the device towards the MO can be suppressed and the injection of the emitted light from the MO in the TTPA can be controlled by the applied current to the CON section. The device reaches an optical output power of up to 9.5 W. The emitted spectra are mode jump free over a wide power range having a spectrally narrow emission of Δλ < 20 pm. By adjusting the control current an optimal driving condition of the device can be found with high output power, narrow spectral bandwidth and a nearly diffraction-limited beam quality factor (1/e2) M2 < 1.5.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Diode laser, distributed Bragg reflector, master oscillator power amplifier, multi-section laser, tapered amplifier.