Longitudinal current profile modification for higher brightness in GaAs-based high-power diode lasers
S. Arslan1, S.K. Khamari1,**, C. Zink1, S.J. Sweeney1,2 and P. Crump1,2
Published in:
Proc. of SPIE, vol. 13876, High-Power Diode Laser Technology XXIV, Photonics West, San Francisco, USA, Jan 17-22, 1387609 (2026).
1 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 James Watt School of Engineering, College of Science and Engineering, University of Glasgow, Glasgow, G12 8LT, UK
** Present address: Semiconductor Lasers and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
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