In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures
J. Cryst. Growth, vol. 415, pp. 1-6 (2015).
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In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra - even at an early stage of the growth of the active region - can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2σ) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.
a Institute of Measurement Engineering and Sensor Technology, University of Applied Sciences Ruhr West, PO Box 100755, 45407 Muelheim a.d. Ruhr, Germany
b LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany
c Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
A1. Characterization, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B3. Light emitting diodes.