Improved lateral brightness in 940-nm high-power broad-area

M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, and P. Crump

Published in:

Semiconductor and Integrated Optoelectronics Conference (SIOE 2021), Cardiff, UK, Mar. 30 - Apr. 1 (2021).

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We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany