Improved lateral brightness in 940-nm high-power broad-area

M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, and P. Crump

Published in:

Semiconductor and Integrated Optoelectronics Conference (SIOE 2021), Cardiff, UK, Mar. 30 - Apr. 1 (2021).

Copyright © 2021 The Authors.
Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Author(s).

Abstract:

We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany