High voltage normally-off transistors and Schottky diodes based on GaN technology

J. Würfl, E. Bahat-Treidel, F. Brunner, M. Cho, O. Hilt, M. Weyers, R. Zhytnytska

Published in:

ECS Trans., vol. 41, no. 8, pp. 127-138 (2011).

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Abstract:

High voltage GaN based power switching transistors in normally-off technology and efficient GaN Schottky diodes are indispensable for a steady improvement of efficiency in power converters and for cutting down volume and weight on the system level. To obtain ultimate device performance, novel concepts in epitaxial design and growth techniques as well as in processing and packaging technology are required. At Ferdinand-Braun-Institut (FBH), normally-off GaN based power transistors and Schottky diodes have been and are being developed. These efforts cover the full value added chain from epitaxial growth of GaN/AlGaN device structures on 3" and 4" n-type SiC substrates, device processing, characterization and novel packaging techniques. The paper summarizes the most important achievements towards high power GaN devices at FBH and will highlight important dependencies towards further improved GaN power devices.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany