High-power diode lasers at 1178 nm with high beam quality and narrow spectra

K. Paschke, F. Bugge, G. Blume, D. Feise, and G. Erbert

Published in:

Opt. Lett., vol. 40, no. 1, pp. 100-102 (2015).

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Abstract:

High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with more than two watts with a narrow spectral width. These features are believed to make this type of diode laser a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectral range by second-harmonic generation to cover a spectral region currently not accessible with direct emitting diode lasers. Future applications might be the laser-cooling of sodium, high-resolution glucose-content measurements, as well as spectroscopy on rare earth elements.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

OCIS codes:

(140.2020) Diode lasers; (230.1480) Bragg reflectors; (250.5590) Quantum-well, -wire and -dot devices; (250.5960) Semiconductor lasers.