Publications 2020

K. Sowoidnich, M. Maiwald, B. Sumpf, M. Towrie, P. Matousek

Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples

Proc. SPIE 11236, Biomedical Vibrational Spectroscopy 2020: Advances in Research and Industry, Photonics West, San Francisco, USA, Feb 1-6, 112360K (2020).

B. Sumpf, M. Braune, M. Maiwald, M.E. Darvin, J. Lademann, G. Tränkle

A diode laser based clinical diagnostic system using shifted excitation resonance Raman difference spectroscopy for the in vivo detection of β-carotene in human skin

Proc. SPIE 11257, Plasmonics in Biology and Medicine XVII, Photonics West, San Francisco, USA, Feb 1-6, 1125708 (2020).

M. Maiwald, B. Sumpf

Improving Raman spectroscopy using diode lasers at 785 nm for shifted excitation Raman difference spectroscopy

Proc. SPIE 11257, Plasmonics in Biology and Medicine XVII, Photonics West, San Francisco, USA, Feb 1-6, 1125708 (2020).

P. Crump, M. Wilkens, M. Hübner, S. Arslan, M. Niemeyer, P.S. Basler, D. Martin, A. Maaßdorf, A. Ginolas, and G. Tränkle

Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1126204 (2020).

M.M. Karow, D. Martin, P. Della Casa, G. Erbert, and P. Crump

Design progress for higher efficiency and brightness in 1 kW diode-laser bars

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1126205 (2020).

P. Hildenstein, A. Sahm, D. Feise, M. Gorjan, S. Tacchini, K. Paschke, and G. Tränkle

High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 112620J (2020).

K. Paschke, G. Blume, J. Pohl, D. Feise, P. Ressel, A. Sahm, and B. Sumpf

Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 112620L (2020).

J.-P. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel, A. Knigge

Traveling wave model-based analysis of tapered broad-area lasers

Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, Photonics West, San Francisco, USA, Feb 1-6, 112740I (2020).

H. Christopher, A. Klehr, J. Fricke, A. Liero, H. Wenzel, A. Knigge, and G. Tränkle

Investigation of 48 emitter DBR laser bars under nanosecond high-peak current excitation

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113010O (2020).

A. Müller, M. Maiwald, B. Sumpf

Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113011F (2020).

J. Fricke, H. Wenzel, O. Brox, P. Crump, B. Sumpf, K. Paschke, M. Matalla, G. Erbert, A. Knigge, and G. Tränkle

Surface Bragg gratings for high brightness lasers

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113011H (2020).

T. Flisgen, E. Gjonaj, H.-W. Glock, and A. Tsakanian

Generalization of coupled S-parameter calculation to compute beam impedances in particle accelerators

Phys. Rev. Accel. Beams, vol. 23, no. 3, pp. 034601, DOI: 10.1103/PhysRevAccelBeams.23.034601 (2020).

M. Wilkens, G. Erbert, H. Wenzel, A. Maaßdorf, J. Fricke, P. Ressel, A. Knigge, and P. Crump

Highly Efficient High-Brightness 970nm Ridge Waveguide Lasers

IEEE Photonics Technol. Lett., vol. 32, no. 7, pp. 406-409 (2020).

S. Fleischmann, S. Hagedorn, A. Mogilatenko, J. Weinrich, D. Prasai, E. Richter, R.-S. Unger, M. Weyers and G. Tränkle

Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy

Semicond. Sci. Technol., vol. 35, no. 03, pp. 035028 (2020).

E. Richter, F.C. Beyer, F. Zimmermann, G. Gärtner, K. Irmscher, I. Gamov, J. Heitmann, M. Weyers, and G. Tränkle

Growth and Properties of Intentionally Carbon-Doped GaN Layers

Cryst. Res. Technol., vol. 55, no. 2, pp. 1900129, DOI: 10.1002/crat.201900129 (2020).

N. Chaturvedi, K. Singh, P. Kachhawa, R. Lossy, S. Mishra, A. Chauhan, D.K. Kharbanda, A.K. Jain, R.R. Thakur, D. Saxena, P.K. Khanna, J. Wuerfl

AlGaN/GaN HEMT based sensor and system for polar liquid detection

Sens. Actuators, A, vol. 302, pp. 111799 (2020).

Y.H. Kang, E. Freier, V. Hoffmann, O. Brox, J. Fricke, L. Sulmoni, M. Matalla, C. Stölmacker, M. Kneissl, M. Weyers, and S. Einfeldt

Continuous-wave operation of DFB laser diodes based on GaN using 10^th-order laterally coupled surface gratings

Opt. Lett., vol. 45, no. 4, pp. 935-938 (2020).

Y.-F. Tsao, J. Würfl, and H.-T. Hsu

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics, vol. 9, no. 2, art. 270, DOI: 10.3390/electronics9020270 (2020).

P. Manley, S. Walde, S. Hagedorn, M. Hammerschmidt, S. Burger, and C. Becker

Nanopatterned sapphire substrates in deep-UVLEDs: is there an optical benefit?

Opt. Express, vol. 28, no. 3, pp. 3619-3635, DOI: 10.1364/OE.379438 (2020).

A. Liero, A. Klehr, A. Knigge and W. Heinrich

Versatile high power pulse-laser source for pico- and nanosecond optical pulses

Eng. Res. Express, vol. 2, no. 1, pp. 015023, DOI: 10.1088/2631-8695/ab5be5 (2020).

N. Surkamp, G. Zyla, E.L. Gurevich, A. Klehr, A. Knigge, A. Ostendorf, M.R. Hofmann

Mode-locked diode laser-based two-photon polymerisation

Electron. Lett., vol. 56, no.2, pp. 91-93 (2020).

S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P.A. Shields, M. Kneissl, M. Weyers

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

J. Cryst. Growth, vol. 531, pp. 125343 (2020).

C. Kürbis, A. Bawamia, M. Krüger, R. Smol, A. Peters, A. Wicht, and G. Tränkle

Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket

Appl. Opt., vol. 59, no. 2, pp. 253-262 (2020).

M. Chi, A. Müller, A.K. Hansen, O.B. Jensen, P.M. Petersen, and B. Sumpf

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm

Appl. Opt., vol. 59, no. 2, pp. 295-299 (2020).

C. Zink, A. Maaßdorf, J. Fricke, P. Ressel, B. Sumpf, G. Erbert, and G. Tränkle

Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm

IEEE Photonics Technol. Lett., vol. 32, no. 1, pp. 59-62 (2020).

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Ferdinand-Braun-Institut