Publications 2020

T. Hoffmann, F. Hühn, S. Shevchenko, W. Heinrich, A. Wentzel

Broadband Driver Amplifier with Voltage Offset for GaN-based Switching PAs

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 273-276 (2020).

T. Shivan, M. Hossain, R. Doerner, T.K. Johansen, K. Nosaeva, H. Yacoub, W. Heinrich and V. Krozer

High Output Power Ultra-Wideband Distributed Amplifier in InP DHBT Technology Using Diamond Heat Spreader

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 401-404 (2020).

S. Paul, W. Heinrich, O. Bengtsson

L-Band Floating-Ground RF Power Amplifier for Reverse-Type Envelope Tracking Systems

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 849-852 (2020).

F. Hühn, F. Müller, L. Schellhase, W. Heinrich, A. Wentzel

High Efficiency, High Bandwidth Switch-Mode Envelope Tracking Supply Modulator

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 853-856 (2020).

T. Shivan, M. Hossain, R. Doerner, T. Johansen, K. Nosaeva, H. Yacoub, W. Heinrich and V. Krozer

A High-Isolation and Highly Linear Super-Wideband SPDT Switch in InP DHBT Technology

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 1125-1128 (2020).

D. Konstantinou , C. Caillaud , T. Shivan, S. Rommel , U. Johannsen , F. Blache , F. Mallecot , V. Krozer , and I.T. Monroy

Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation

Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), free online, Sep. 14-18, ISBN 978-1-7281-6086-3, pp. 25-26 (2020).

E. Bahat Treidel, H. Christopher, O. Hilt, A. Klehr, A. Ginolas, A. Liero, J. Würfl

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Electron. Lett., vol. 56, no. 20, pp. 1084-1086 (2020).

N. Werner, J. Wegemund, D. Feise, K. Paschke, and G. Tränkle

Emission behavior of distributed Bragg-reflector ridge waveguide lasers exposed to strong optical feedback

Appl. Opt., vol. 59, no. 28, pp. 8653-8660 (2020).

J. Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt, and J.W. Tomm

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Appl. Phys. Lett., vol. 117, no. 12, pp. 121104, DOI: 10.1063/5.0018751 (2020).

H. Amano, R. Collazo, C. De Santi, S. Einfeldt, M. Funato, J. Glaab, S. Hagedorn, A. Hirano, H. Hirayama, R. Ishii, Y. Kashima, Y. Kawakami, R. Kirste, M. Kneissl, R. Martin, F. Mehnke, M. Meneghini, A. Ougazzaden, P.J. Parbrook, S. Rajan, P. Reddy, F. Römer, J. Ruschel, B. Sarkar, F. Scholz, L.J. Schowalter, P. Shields, Z. Sitar, L. Sulmoni, T. Wang, T. Wernicke, M. Weyers, B. Witzigmann, Y.-R. Wu, T. Wunderer and Y. Zhang

The 2020 UV emitter roadmap

J. Phys. D: Appl. Phys., vol. 53, no. 50, pp. 503001 (2020).

M. Chi, A. Müller, A.K. Hansen, O.B. Jensen, P.M. Petersen, and B. Sumpf

Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm

Appl. Opt., vol. 59, no. 26, pp. 7836-7840 (2020).

N. Lobo-Ploch, F. Mehnke, L. Sulmoni, H.K. Cho, M. Guttmann, J. Glaab, K. Hilbrich, T. Wernicke, S. Einfeldt, and M. Kneissl

Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates

Appl. Phys. Lett., vol. 117, no. 11, pp. 111102, DOI: 10.1063/5.0015263 (2020).

A. Knauer, A. Mogilatenko, J. Weinrich, S. Hagedorn, S. Walde, T. Kolbe, L. Cancellara, and M. Weyers

The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB-LED Structures

Cryst. Res. Technol., vol. 55, no. 9, Special Issue: Dedicated to Prof. W. Neumann on his 75th Birthday, pp. 1900215, doi:10.1002/crat.201900215 (2020).

K. Prince, A. Knauer, A. Mogilatenko, M. Weyers, and K. Haberland

Application of 280nm In-Situ Metrology to study the Influence of AlN Templates on Surface Roughness and Strain Effects in UVA/UVB LEDs

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2020), Dig., pp. 33-36 (2020).

E. Bahat Treidel, O. Hilt, V. Hoffmann, F. Brunner, B. Janke, N. Bickel, H. Yazdani, H. Gargouri and J. Würfl

The influence of the GaN substrate types and active area scaling design on the conduction properties of vertical GaN MISFETs for laser driving applications

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2020), Dig., pp. 229-232 (2020).

A. Possberg, M. Hossain, N. Weimann

Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications

Third International Workshop on Mobile Terahertz Systems (IWMTS), Essen, Germany, Jul. 1-2, virtual event, ISBN: 978-1-7281-5598-2 (2020).

T. Hoffmann, A. Wentzel, T. Flisgen, F. Hühn and W. Heinrich

GaN digital microwave outphasing PA

Int. J. Microwave Wireless Technolog., vol. 12. no. 7, Special Issue: EuMW 2019 Special Issue, pp. 567-577, doi:10.1017/S1759078720000367 (2020).

O. Rettig, F. Scholz, Y. Li, J. Biskupek^b, U. Kaiser, S. Hagedorn, M. Weyers, R. Müller, and K. Thonke

Impact of High-Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

phys. stat. sol. (a), vol. 217, no. 16, pp. 2000251 (2020).

V. Tronciu, B. Arar, H. Wenzel

Travelling-Wave Analysis of Extended Cavity Diode Lasers

Rom. Rep. Phys., vol. 72, no. 3, art. 411 (2020).

G. Zyla, N. Surkamp, E.L. Gurevich, C. Esen, A. Klehr, A. Knigge, M.R. Hofmann, and A. Ostendorf

Two-photon polymerization with diode lasers emitting ultrashort pulses with high repetition rate

Opt. Lett., vol. 45, no. 17, pp. 4827-4830 (2020).

H.K. Cho, J.H. Kang, L. Sulmoni, K. Kunkel, J. Rass, N. Susilo, T. Wernicke, S. Einfeldt and M. Kneissl

Low resistance n-contact for UVC LEDs by a two-step plasma etching process

Semicond. Sci. Technol., vol. 35, no. 09, pp. 095019, DOI: 10.1088/1361-6641/ab9ea7 (2020).

C. Netzel, V. Hoffmann, S. Einfeldt, and M. Weyers

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

J. Electron. Mater., vol. 49, no. 9, Topical Collection: 18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), pp. 5138-5143, DOI: 10.1007/s11664-020-08159-x (2020).

U. Bandelow, M. Radziunas, A. Zeghuzi, H.-J. Wünsche, and H. Wenzel

Dynamics in high-power diode lasers

Proc. SPIE 11356, Semiconductor Lasers and Laser Dynamics IX, SPIE Photonics Europe, Online Only, Apr. 6-10, 113560W (2020).

J. Böcker, K. Tetzner, S. Heucke, O. Hilt, E. Bahat-Treidel, S. Dieckerhoff and J. Würfl

Dispersion effects in on-state resistance of lateral Ga₂O₃ MOSFETs at 300 V switching

Electron. Lett., vol. 56, no. 16, pp. 838-840 (2020).

M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge and P. Crump

High-brightness broad-area diode lasers with enhanced self-aligned lateral structure

Semicond. Sci. Technol., vol. 35, no. 09, pp. 095011, DOI: 10.1088/1361-6641/ab9bec (2020).

C. Glaser, F. Karlewski, J. Kluge, J. Grimmel, M. Kaiser, A. Günther, H. Hattermann, M. Krutzik and J. Fortágh

Absolute frequency measurement of rubidium 5S-6P transitions

Phys. Rev. A, vol. 102, no. 1, pp. 012804 (2020).

L. Sulmoni, F. Mehnke, A. Mogilatenko, M. Guttmann, T. Wernicke, and M. Kneissl

Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

Photonics Res., vol. 8, no. 8, pp. 1381-1387 (2020).

S. Hagedorn, S. Walde, A. Knauer, N. Susilo, D. Pacak, L. Cancellara, C. Netzel, A. Mogilatenko, C. Hartmann, T. Wernicke, M. Kneissl, and M. Weyers

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes

phys. stat. sol. (a), vol. 217, no. 14, Special Issue: Ultraviolet Materials and Devices, pp. 1901022, DOI: 10.1002/pssa.201901022 (2020).

J. Rass, J. Ruschel, J. Glaab, I. Ostermay, and S. Einfeldt

Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs

IEEE Photonics Technol. Lett., vol. 32, no. 16, pp. 1007-1010 (2020).

A. Boni, H.J. Wünsche, H. Wenzel and P. Crump

Impact of the capture time on the series resistance of quantum-well diode lasers

Semicond. Sci. Technol., vol. 35, no. 08, pp. 085032, DOI: 10.1088/1361-6641/ab9723 (2020).

A. Müller, B. Sumpf

Compact diode laser based light source with alternating dual-wavelength emission at 532 nm

Appl. Phys. B, vol. 126, no. 8, p. 126:128, DOI: 10.1007/s00340-020-07482-9 (2020).

E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero and J. Würfl

The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications

78th Device Research Conference (DRC 2020), Columbus, USA, Jun. 21-24, ISBN 978-1-7281-7047-3 (2020).

M. Klute, H.-E. Porteanu, I. Stefanovic, W. Heinrich, P. Awakowicz and R.P. Brinkmann

Theoretical investigation of a miniature microwave driven plasma jet

Plasma Sources Sci. Technol., vol. 29, no. 06, pp. 065018, DOI: 10.1088/1361-6595/ab9483 (2020).

H.K. Cho, N. Susilo, M. Guttmann, J. Rass, I. Ostermay, S. Hagedorn, E. Ziffer, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl

Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact

IEEE Photonics Technol. Lett., vol. 32, no. 14, pp. 891-894 (2020).

I. Levine, I. Gamov, M. Rusu, K. Irmscher, C. Merschjann, E. Richter, M. Weyers, and Th. Dittrich

Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy

Phys. Rev. B, vol. 101, no. 24, pp. 245205 (2020).

C.-Y. Huang, S. Walde, C.-L. Tsai, C. Netzel, H.-H. Liu, S. Hagedorn, Y.-R. Wu, Y.-K. Fu, and M. Weyers

Overcoming the excessive compressive strain in AlGaN epitaxy by introducinghigh Si-doping in AlN templates

Jpn. J. Appl. Phys., vol. 59, no. 7, pp. 070904 (2020).

M. Hossain, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer

Highly linear fundamental up-converter in InP DHBT technology for W-band applications

Microw. Opt. Technol. Lett., vol. 62, no. 7, pp. 2513-2517, DOI: 10.1002/mop.32357 (2020).

C. Netzel, V. Hoffmann, J.W. Tomm, F. Mahler, S. Einfeldt, and M. Weyers

Temperature-Dependent Charge Carrier Diffusion in [0001] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

phys. stat. sol. (b), vol. 257, no. 6, pp. 2000016, DOI: 10.1002/pssb.202000016 (2020).

A. Klehr, A. Liero, H. Christopher, H. Wenzel, A. Maaßdorf, P. Della Casa, J. Fricke, A. Ginolas and A. Knigge

Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application

Semicond. Sci. Technol., vol. 35, no. 06, pp. 065016, DOI: 10.1088/1361-6641/ab8397 (2020).

P. Albrodt, M. Niemeyer, M. Elattar, J. Hamperl, G. Blume, A. Ginolas, J. Fricke, A. Maaßdorf, P. Georges, G. Lucas-Leclin, K. Paschke and P. Crump

Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining

Semicond. Sci. Technol., vol. 35, no. 06, pp. 065018, DOI: 10.1088/1361-6641/ab804e (2020).

I. Gamov, E. Richter, M. Weyers, G. Gärtner, and K. Irmscher

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

J. Appl. Phys., vol. 127, no. 20, pp. 205701, DOI: 10.1063/5.0010844 (2020).

J.O. Gwaro, C. Brenner, L.S. Theurer, M. Maiwald, B. Sumpf, M.R. Hofmann

Continuous Wave THz System Based on an Electrically Tunable Monolithic Dual Wavelength Y-Branch DBR Diode Laser

J. Infrared Milli. Terahz. Waves, vol. 41, no. 5, pp. 568-575, DOI: 10.1007/s10762-020-00676-4 (2020).

H.-E. Porteanu, D. Wolf, and W. Heinrich

Frequency dependence of the capacitive excitation of plasma: An experimental proof

J. Appl. Phys., vol. 127, no. 18, pp. 183301, DOI: 10.1063/5.0005045 (2020).

E. Yarali, C. Koutsiaki, H. Faber, K. Tetzner, E. Yengel, P. Patsalas, N. Kalfagiannis, D.C. Koutsogeorgis, and T.D. Anthopoulos

Recent Progress in Photonic Processing of Metal-Oxide Transistors

Adv. Funct. Mater., vol. 30, no. 20, Special Issue: Emerging Thin-Film Transistor Technologies and Applications, pp. 1906022 (2020).

D.-H. Lee, D. Kang, T.-Y. Seong, M. Kneissl and H. Amano

Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

J. Phys. D: Appl. Phys., vol. 53, no. 04, pp. 045106 (2020).

M. Norman-Reiner, E. Freier, A. Mogilatenko, I. Ostermay, V. Hoffmann, R. Szukiewicz, O. Krüger, D. Hommel, S. Einfeldt, M. Weyers, and G. Tränkle

Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes

J. Vac. Sci. Technol. B, vol. 38, no. 3, pp. 032211 (2020).

P. Strobbia, R.A. Odion, M. Maiwald, B. Sumpf, T. Vo-Dinh

Direct SERDS sensing of molecular biomarkers in plants under field conditions

Anal. Bioanal. Chem., vol. 412, no. 14, pp. 3457-3466 (2020).

N. Susilo, E. Ziffer, S. Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Rass, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, and M. Kneissl

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Photonics Res., vol. 8, no. 4, pp. 589-594 (2020).

S. Jung, M.E. Darvin, J. Schleusener, G. Thiede, J. Lademann, M. Braune, M. Maiwald, B. Sumpf, G. Tränkle, D. Kutzer, F. Elban, H. Fuss

In vivo detection of changes in cutaneous carotenoids after chemotherapy using shifted excitation resonance Raman difference and fluorescence spectroscopy

Skin Res Technol., vol. 26, no. 2, pp. 301-307, DOI: 10.1111/srt.12800 (2020).

N. Surkamp, G. Zyla, E.L. Gurevich, C. Esen, A. Klehr, A. Knigge, A. Ostendorf, M.R. Hofmann

Mode-locked diode lasers as sources for Two-Photon Polymerization

Proc. SPIE 11349, 3D Printed Optics and Additive Photonic Manufacturing II, SPIE Photonics Europe, Online Only, Apr. 6-10, 113490G (2020).

E. Kaule, R. Doerner, N. Weimann, M. Rudolph

Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies

13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 52-55 (2020).

M. Hossain, T.K. Johansen, M. Hrobak, W. Heinrich, V. Krozer

A Compact Broadband Marchand Balun for Millimeter-wave and Sub-THz Applications

13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 60-63 (2020).

P. Sriperumbuduri, T.K. Johansen, K. Erkelenz, A. Wentzel, R. Doerner, S. Boppel, and M. Rudolph

An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs

13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 240-243 (2020).

K. Erkelenz, P. Sriperumbuduri, T. Flisgen, M. Rudolph, T.K. Johansen, W. Heinrich, A. Wentzel

Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure

13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 268-271 (2020).

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P.R. Edwards, G. Ferenczi, B. Hourahine, A. Kotzai, S. Kraeusel, G. Kusch, R.W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, M.D. Smith, P.J. Parbrook, J. Enslin, F. Mehnke, C. Kuhn, T. Wernicke, M. Kneissl, S. Hagedorn, A. Knauer, S. Walde, M. Weyers, P.-M. Coulon, P.A. Shields, J. Bai, Y. Gong, L. Jiu, Y. Zhang, R.M. Smith, T. Wang and A. Winkelmann

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Semicond. Sci. Technol., vol. 35, no. 05, Special Issue: Nitride Semiconductors, pp. 054001, DOI: 10.1088/1361-6641/ab75a5 (2020).

A. Rumiantsev, R. Doerner, G.N. Phung

Calibration Substrate Design for Accurate mm-Wave Probe-Tip Calibration

94th ARFTG Microwave Measurement Symposium (ARFTG), San Antonio, USA, Jan. 26-29 (2020).

S. Hagedorn, S. Walde, N. Susilo, C. Netzel, N. Tillner, R.-S. Unger, P. Manley, E. Ziffer, T. Wernicke, C. Becker, H.-J. Lugauer, M. Kneissl, and M. Weyers

Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes

phys. stat. sol. (a), vol. 217, no. 7, Special Issue: Nitride Semiconductors, pp. 1900796, DOI: 10.1002/pssa.201900796 (2020).

K. Sowoidnich, M. Maiwald, B. Sumpf, M. Towrie, P. Matousek

Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples

Proc. SPIE 11236, Biomedical Vibrational Spectroscopy 2020: Advances in Research and Industry, Photonics West, San Francisco, USA, Feb 1-6, 112360K (2020).

B. Sumpf, M. Braune, M. Maiwald, M.E. Darvin, J. Lademann, G. Tränkle

A diode laser based clinical diagnostic system using shifted excitation resonance Raman difference spectroscopy for the in vivo detection of β-carotene in human skin

Proc. SPIE 11257, Plasmonics in Biology and Medicine XVII, Photonics West, San Francisco, USA, Feb 1-6, 1125708 (2020).

M. Maiwald, B. Sumpf

Improving Raman spectroscopy using diode lasers at 785 nm for shifted excitation Raman difference spectroscopy

Proc. SPIE 11257, Plasmonics in Biology and Medicine XVII, Photonics West, San Francisco, USA, Feb 1-6, 1125708 (2020).

P. Crump, M. Wilkens, M. Hübner, S. Arslan, M. Niemeyer, P.S. Basler, D. Martin, A. Maaßdorf, A. Ginolas, and G. Tränkle

Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1126204 (2020).

M.M. Karow, D. Martin, P. Della Casa, G. Erbert, and P. Crump

Design progress for higher efficiency and brightness in 1 kW diode-laser bars

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1126205 (2020).

A. Knigge, H. Christopher, A. Liero, J. Fricke, A. Klehr, T. Honig, E. Langenbach, H. Wenzel, G. Tränkle

Wavelength stabilized high pulse power laser bars for line-flash automotive LIDAR

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 112620F (2020).

P. Hildenstein, A. Sahm, D. Feise, M. Gorjan, S. Tacchini, K. Paschke, and G. Tränkle

High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 112620J (2020).

K. Paschke, G. Blume, J. Pohl, D. Feise, P. Ressel, A. Sahm, and B. Sumpf

Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector

Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, Photonics West, San Francisco, USA, Feb 1-6, 112620L (2020).

J.-P. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel, A. Knigge

Traveling wave model-based analysis of tapered broad-area lasers

Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, Photonics West, San Francisco, USA, Feb 1-6, 112740I (2020).

H. Christopher, A. Klehr, J. Fricke, A. Liero, H. Wenzel, A. Knigge, and G. Tränkle

Investigation of 48 emitter DBR laser bars under nanosecond high-peak current excitation

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113010O (2020).

P. Crump, G. Tränkle

A brief history of kilowatt-class diode-laser bars

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113011D (2020).

A. Müller, M. Maiwald, B. Sumpf

Micro-integrated dual-wavelength ridge-waveguide master oscillator power amplifier with an optical output power of 0.5 W at 785 nm

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113011F (2020).

J. Fricke, H. Wenzel, O. Brox, P. Crump, B. Sumpf, K. Paschke, M. Matalla, G. Erbert, A. Knigge, and G. Tränkle

Surface Bragg gratings for high brightness lasers

Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, Photonics West, San Francisco, USA, Feb 1-6, 113011H (2020).

V. Tronciu, H. Wenzel and A. Knigge

Theoretical studies of the generation of picoseconds pulses with two-section blueviolet semiconductor lasers

Semicond. Sci. Technol., vol. 35, no. 04, pp. 045029 (2020).

T. Flisgen, E. Gjonaj, H.-W. Glock, and A. Tsakanian

Generalization of coupled S-parameter calculation to compute beam impedances in particle accelerators

Phys. Rev. Accel. Beams, vol. 23, no. 3, pp. 034601, DOI: 10.1103/PhysRevAccelBeams.23.034601 (2020).

M. Wilkens, G. Erbert, H. Wenzel, A. Maaßdorf, J. Fricke, P. Ressel, A. Knigge, and P. Crump

Highly Efficient High-Brightness 970nm Ridge Waveguide Lasers

IEEE Photonics Technol. Lett., vol. 32, no. 7, pp. 406-409 (2020).

S. Fleischmann, S. Hagedorn, A. Mogilatenko, J. Weinrich, D. Prasai, E. Richter, R.-S. Unger, M. Weyers and G. Tränkle

Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy

Semicond. Sci. Technol., vol. 35, no. 03, pp. 035028 (2020).

E. Richter, F.C. Beyer, F. Zimmermann, G. Gärtner, K. Irmscher, I. Gamov, J. Heitmann, M. Weyers, and G. Tränkle

Growth and Properties of Intentionally Carbon-Doped GaN Layers

Cryst. Res. Technol., vol. 55, no. 2, pp. 1900129, DOI: 10.1002/crat.201900129 (2020).

N. Chaturvedi, K. Singh, P. Kachhawa, R. Lossy, S. Mishra, A. Chauhan, D.K. Kharbanda, A.K. Jain, R.R. Thakur, D. Saxena, P.K. Khanna, J. Wuerfl

AlGaN/GaN HEMT based sensor and system for polar liquid detection

Sens. Actuators, A, vol. 302, pp. 111799 (2020).

Y.H. Kang, E. Freier, V. Hoffmann, O. Brox, J. Fricke, L. Sulmoni, M. Matalla, C. Stölmacker, M. Kneissl, M. Weyers, and S. Einfeldt

Continuous-wave operation of DFB laser diodes based on GaN using 10^th-order laterally coupled surface gratings

Opt. Lett., vol. 45, no. 4, pp. 935-938 (2020).

Y.-F. Tsao, J. Würfl, and H.-T. Hsu

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics, vol. 9, no. 2, art. 270, DOI: 10.3390/electronics9020270 (2020).

P. Manley, S. Walde, S. Hagedorn, M. Hammerschmidt, S. Burger, and C. Becker

Nanopatterned sapphire substrates in deep-UVLEDs: is there an optical benefit?

Opt. Express, vol. 28, no. 3, pp. 3619-3635, DOI: 10.1364/OE.379438 (2020).

A. Liero, A. Klehr, A. Knigge and W. Heinrich

Versatile high power pulse-laser source for pico- and nanosecond optical pulses

Eng. Res. Express, vol. 2, no. 1, pp. 015023, DOI: 10.1088/2631-8695/ab5be5 (2020).

N. Surkamp, G. Zyla, E.L. Gurevich, A. Klehr, A. Knigge, A. Ostendorf, M.R. Hofmann

Mode-locked diode laser-based two-photon polymerisation

Electron. Lett., vol. 56, no.2, pp. 91-93 (2020).

S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P.A. Shields, M. Kneissl, M. Weyers

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

J. Cryst. Growth, vol. 531, pp. 125343 (2020).

C. Kürbis, A. Bawamia, M. Krüger, R. Smol, A. Peters, A. Wicht, and G. Tränkle

Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket

Appl. Opt., vol. 59, no. 2, pp. 253-262 (2020).

M. Chi, A. Müller, A.K. Hansen, O.B. Jensen, P.M. Petersen, and B. Sumpf

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm

Appl. Opt., vol. 59, no. 2, pp. 295-299 (2020).

C. Zink, A. Maaßdorf, J. Fricke, P. Ressel, B. Sumpf, G. Erbert, and G. Tränkle

Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm

IEEE Photonics Technol. Lett., vol. 32, no. 1, pp. 59-62 (2020).

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