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FBH diode laser bars deliver 2 kW output
/en/media-center/media-review/fbh-diode-laser-bars-deliver-2-kw-output
FBH diode laser bars deliver 2 kW output High energy laser applications of the future are the targets of diode laser research at Berlin’s Ferdinand-Braun-Institut, Leibniz-Institut für…
Diode Laser Bars with 2 kW Output Power
/en/media-center/media-review/diode-laser-bars-with-2-kw-output-power
Diode Laser Bars with 2 kW Output Power The FBH presented the latest results from their project CryoLaser.more... (pdf, p. 17)
Diodenlaserbarren mit einer Ausgangsleistung von 2 kW
/en/media-center/media-review/diodenlaserbarren-mit-einer-ausgangsleistung-von-2-kw
Diodenlaserbarren mit einer Ausgangsleistung von 2 kW Spitzenleistung bei Diodenlaserbarren: Forscher konnten eine optische Ausgangsleistung von 2 kW mit einem einzelnen Laserbarren erzielen,…
FBH shows first diode laser bars with 2kW output
/en/media-center/media-review/fbh-shows-first-diode-laser-bars-with-2kw-output
FBH shows first diode laser bars with 2kW output Project CryoLaser produces record output for 940nm laser diodesmore...
Power Modules for Hybrid Electrical / Electrical Vehicles - Lifetime / Enhanced cooling & packaging / new semiconductors -
/en/media-center/media-review/power-modules-for-hybrid-electrical-electrical-vehicles-lifetime-enhanced-cooling-packaging-new-semiconductors
Power Modules for Hybrid Electrical / Electrical Vehicles - Lifetime / Enhanced cooling & packaging / new semiconductors - Dr.-Ing. Markus ThobenInfineon Technologies AG
Low-noise amplifiers at Chalmers University of Technology: From basic research to spin-off company
/en/media-center/media-review/low-noise-amplifiers-at-chalmers-university-of-technology-from-basic-research-to-spin-off-company
Low-noise amplifiers at Chalmers University of Technology: From basic research to spin-off company Prof. Jan GrahnChalmers University of Technology, Sweden
Accelerated on-state stressing of normally-off GaN transistors for power switching applications
/en/research/research-news/accelerated-on-state-stressing-of-normally-off-gan-transistors-for-power-switching-applications
With accelerated aging tests, the FBH investigated and compared GaN-on-SiC and GaN-on-Si transistors designed for power electronic applications.
National Laser Symposium
/en/events/national-laser-symposium
FBH presents an invited lecture at the conference
International Workshop on Physics of Semiconductor Devices
/en/events/international-workshop-on-physics-of-semiconductor-devices
FBH presents an invited lecture at the IWPSD
Materials Research Society - Fall Meeting
/en/events/materials-research-society-fall-meeting
The FBH has been invited to speek at the MRS Fall Meeting and at the Massachussetts Institute of Technology