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Diodenlaserbarren mit einer Ausgangsleistung von 2 kW
/en/media-center/media-review/diodenlaserbarren-mit-einer-ausgangsleistung-von-2-kw
Diodenlaserbarren mit einer Ausgangsleistung von 2 kW Spitzenleistung bei Diodenlaserbarren: Forscher konnten eine optische Ausgangsleistung von 2 kW mit einem einzelnen Laserbarren erzielen,…
FBH shows first diode laser bars with 2kW output
/en/media-center/media-review/fbh-shows-first-diode-laser-bars-with-2kw-output
FBH shows first diode laser bars with 2kW output Project CryoLaser produces record output for 940nm laser diodesmore...
Power Modules for Hybrid Electrical / Electrical Vehicles - Lifetime / Enhanced cooling & packaging / new semiconductors -
/en/media-center/media-review/power-modules-for-hybrid-electrical-electrical-vehicles-lifetime-enhanced-cooling-packaging-new-semiconductors
Power Modules for Hybrid Electrical / Electrical Vehicles - Lifetime / Enhanced cooling & packaging / new semiconductors - Dr.-Ing. Markus ThobenInfineon Technologies AG
Low-noise amplifiers at Chalmers University of Technology: From basic research to spin-off company
/en/media-center/media-review/low-noise-amplifiers-at-chalmers-university-of-technology-from-basic-research-to-spin-off-company
Low-noise amplifiers at Chalmers University of Technology: From basic research to spin-off company Prof. Jan GrahnChalmers University of Technology, Sweden
Accelerated on-state stressing of normally-off GaN transistors for power switching applications
/en/research/research-news/accelerated-on-state-stressing-of-normally-off-gan-transistors-for-power-switching-applications
With accelerated aging tests, the FBH investigated and compared GaN-on-SiC and GaN-on-Si transistors designed for power electronic applications.
National Laser Symposium
/en/events/national-laser-symposium
FBH presents an invited lecture at the conference
International Workshop on Physics of Semiconductor Devices
/en/events/international-workshop-on-physics-of-semiconductor-devices
FBH presents an invited lecture at the IWPSD
Materials Research Society - Fall Meeting
/en/events/materials-research-society-fall-meeting
The FBH has been invited to speek at the MRS Fall Meeting and at the Massachussetts Institute of Technology
Flip-Chip Interconnects for DC to 500 GHz
/en/research/research-news/flip-chip-interconnects-for-dc-to-500nbspghz
FBH has developed low loss flip-chip interconnects up to 500 GHz. The new approach is based on shielded striplines on MMIC and carrier board together with AuSn bumps that have heights of only…
Charakterisierung und Optimierung von (Al, Ga)N-basierten UV-Photodetektoren
/en/research/research-news/charakterisierung-und-optimierung-von-al-gan-basierten-uv-photodetektoren-1
Charakterisierung und Optimierung von (Al, Ga)N-basierten UV-Photodetektoren Moritz BrendelFerdinand-Braun-Institut, Berlin