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Aufbau und Funktion des BL2000 Barrenbonders
/en/media-center/press-releases/aufbau-und-funktion-des-bl2000-barrenbonders
Juliane RieprichFerdinand-Braun-Institut, Berlin
Der Klavierstimmer für Mikrowellentechnik
/en/media-center/media-review/der-klavierstimmer-fuer-mikrowellentechnik
FBH-Spin-off Phasor Instruments sucht die beste Frequenz.
DOPS Award for PhD achievements
/en/media-center/media-review/dops-award-for-phd-achievements
On January 22, Lars Lindvold from the Danish Optical Society (DOPS) awarded the DOPS Prize 2013 to André Müller for his achievements in his thesis.
780 nm phase modulators based on GaAs – an alternative to crystal-based modulators
/en/research/research-news/780-nm-phase-modulators-based-on-gaas-an-alternative-to-crystal-based-modulators
Chip-based phase modulators allow to integrate phase control and modulation into hybrid laser and spectroscopy modules, leading to very compact and robust systems. III-V compound semiconductors are…
Development of slanted gates for AlGaN/GaN HEMTs
/en/research/research-news/development-of-slanted-gates-for-algangan-hemts
Two new process sequences for the formation of slanted gates have been developed at the FBH – the advanced gate modules are ready for integration into GaN-based HEMT and MMIC technology. They allow…
UV Laser Processing for Semiconductor Devices
/en/media-center/media-review/uv-laser-processing-for-semiconductor-devices
Highly flexible laser-assisted fabrication for gallium nitride based devices
Mit Laserpower Richtung China
/en/media-center/media-review/mit-laserpower-richtung-china
Semiconductor laser modules from the Ferdinand-Braun-Institut as door opener
Wachstumskern Diodenlaser
/en/media-center/media-review/wachstumskern-diodenlaser
The research project "BrightLas" trims direct diode lasers and pico second lasers for industrial surface treatment.
A gentle look through
/en/media-center/media-review/a-gentle-look-through
Terahertz rays are good for more than just body scans at airports. FBH is one of the world leading institutes
Short-channel effect-free 100 nm Ka-band transistors
/en/research/research-news/short-channel-effect-free-100-nm-ka-band-transistors
The FBH has developed the key gate technology for GaN power amplifier MMICs and tested epitaxial layer structures adjusted to the short gates. An implementation of these modules in the existing GaN…