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Gallium oxide power transistors achieve record values
/en/media-center/media-review/gallium-oxide-power-transistors-achieve-record-values
Researchers at the Leibniz-Institut für Höchstfrequenztechnik (Berlin) have developed a novel type of MOSFETs based on gallium oxide (ß-Ga2O3), with breakthrough characteristics.
Gallium oxide power transistors with record values
/en/media-center/media-review/gallium-oxide-power-transistors-with-record-values-2
The Ferdinand-Braun-Institut (FBH) has announced that it has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3)
FBH Achieves Gallium Oxide Breakthrough
/en/media-center/media-review/fbh-achieves-gallium-oxide-breakthrough
Scientists at the Ferdinand-Braun-Institut (FBH) have achieved what they believe is a breakthrough for transistors based on the ultra wideband semiconductor gallium oxide. They published their…
Energy-efficient power electronics: Gallium oxide power transistors with record values
/en/media-center/media-review/energy-efficient-power-electronics-gallium-oxide-power-transistors-with-record-values-1
Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a…
IEEE High Power Diode Lasers & Systems Conference
/en/events/ieee-high-power-diode-lasers-systems-conference
The FBH presents current research results at the conference and is represented with a keynote
Gallium Oxide Power Transistors with Record Values
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Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applications.
Gallium Oxide Power Transistors with Record Values
/en/media-center/media-review/gallium-oxide-power-transistors-with-record-values
On a footprint as small as possible, they should offer low energy consumption and achieve ever higher power densities, thus working more efficiently.
Gallium-Oxide Power Transistors Handle 155MW per Square Centimeter
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On a footprint as small as possible, power electronic components should offer low energy consumption and achieve ever higher power densities, thus working more efficiently. This is where conventional…
2nd Innovation Day of Research Fab Microelectronics Germany
/en/events/2nd-innovation-day-of-research-fab-microelectronics-germany
Under the motto "From IDays to IDeas", the Research Fab Microelectronics Germany presents new developments on the subject of "Microwave & Terahertz" and offers experts, users and colleagues a…
DRIP - International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
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The DRIP XVIII conference covers all aspects of defects in semiconductors and will be held in Berlin. It is jointly organized by FBH und IKZ.