Gallium-Oxide Power Transistors Handle 155MW per Square Centimeter

On a footprint as small as possible, power electronic components should offer low energy consumption and achieve ever higher power densities, thus working more efficiently. This is where conventional devices reach their limits. Scientists all over the world are therefore investigating new materials and components that can meet these requirements. The Ferdinand-Braun-Institut (FBH) has now achieved a breakthrough with transistors based on gallium oxide (ß-Ga₂O₃).
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