Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT
C. Kuring1, N. Wieczorek1, O. Hilt2, M. Wolf2, J. Böcker1, J. Würfl2, S. Dieckerhoff1
IEEE Energy Conversion Congress and Exposition (ECCE 2019), Baltimore, USA, Sep. 29 - Oct. 3, pp. 824-831, ISBN: 978-1-7281-0395-2 (2019).
The dynamic on-state resistance of monolithically integrated bidirectional GaN HEMTs assuming hardswitching in half-bridge topology is studied for different approaches of substrate termination. Passive substrate termination to one source node of the bidirectional GaN HEMT leads to asymmetrical on-state characteristics while a floating substrate results in symmetrical but noticeable Ron-increase. Resistive substrate termination is investigated to evaluate the prospective benefits and requirements of active substrate termination. The effective on-state resistance of the bidirectional GaN HEMT can be minimized by employing an optimized substrate termination resistance.
1 Chair of Power Electronics, Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
HEMTs, Gallium Nitride, bidirectional, integration, switching characteristics, dynamic on-state resistance, power semiconductor device, semiconductor, multilevel inverter, T-type inverter.
Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.