C. Kuring1, N. Wieczorek1, O. Hilt2, M. Wolf2, J. Böcker1, J. Würfl2, S. Dieckerhoff1
IEEE Energy Conversion Congress and Exposition (ECCE 2019), Baltimore, USA, Sep. 29 - Oct. 3, pp. 824-831, ISBN: 978-1-7281-0395-2 (2019).
The dynamic on-state resistance of monolithically integrated bidirectional GaN HEMTs assuming hardswitching in half-bridge topology is studied for different approaches of substrate termination. Passive substrate termination to one source node of the bidirectional GaN HEMT leads to asymmetrical on-state characteristics while a floating substrate results in symmetrical but noticeable Ron-increase. Resistive substrate termination is investigated to evaluate the prospective benefits and requirements of active substrate termination. The effective on-state resistance of the bidirectional GaN HEMT can be minimized by employing an optimized substrate termination resistance.
1 Chair of Power Electronics, Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
HEMTs, Gallium Nitride, bidirectional, integration, switching characteristics, dynamic on-state resistance, power semiconductor device, semiconductor, multilevel inverter, T-type inverter.
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