High-power broad-area buried-mesa lasers
P. Della Casa, O. Brox, J. Decker, M. Winterfeldt, P. Crump, H. Wenzel and M. Weyers
Published in:
Semicond. Sci. Technol., vol. 32, no. 6, pp. 065009 (2017).
Abstract:
Broad area lasers emitting near 940 nm are fabricated using a process based on two-step epitaxy. The n-side of the layer structure and the active layer are grown during the first epitaxial step, the p-side during the second. Between the first and the second step a shallow etching is used to remove the active layer from the two sides and at the two facets. This simple approach allows the creation of buried mesa lasers with non-absorbing mirrors, resulting in a reduced lateral current leakage, lower threshold current and higher efficiency, plus an increased robustness with respect to catastrophic optical damage.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
MOCVD, semiconductor laser, broad-area lasers, high-power lasers.
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