CBr4-based in-situ etching of GaAs, assisted with TMAI and TMGa
P. Della Casa, A. Maaßdorf, U. Zeimer, M. Weyers
Published in:
J. Cryst. Growth, vol. 434, pp. 116-122 (2016).
Abstract:
In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
A1.Etching; A1.Defects; A3.Metalorganic vapor phase epitaxy; B1.Halides; B2.Semiconducting gallium arsenide
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