Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors

M. Brahema, A. Mogilatenkoa,b, D. Stoppela, D. Bergerc, S. Hochheima, D. Rentnera, I. Ostermaya, M. Reinera, S. Boppela, K. Nosaevaa, N. Weimanna,d

Published in:

Microelectron. Eng., vol. 215, pp. 111017 (2019).

Copyright © 2019 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from Elsevier B.V.


We report on surface pretreatment for ohmic contacts to p-doped In0.53Ga0.47As with improved thermal stability. It is found that the cleaning of In0.53Ga0.47As surface by ammonium sulfide or sulfuric acid offers the optimum surface treatment prior to metal deposition. Contacts using an iridium contact layer and palladium diffusion barrier were fabricated and compared to a conventional platinum-based contact Pt/Ti/Pt/Au. Pt-based metal stack suffered from void formation and high reactivity with the semiconductor when annealed at 240°C for a few hours, as examined by transmission electron microscopy. As a result, the Pt-based stack exhibited strong deterioration of the resistivity. On the other hand, the Ir contact maintained its integrity during thermal stress. The improved contact exhibited a void and reaction-free microstructure and offered stable resistivity values with annealing.

a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
b Humboldt-Universität, Berlin, Germany
c Technische Universität Berlin , Berlin, Germany
d Universität Duisburg-Essen, Duisburg, Germany

Index Terms:

InP, HBT, Ohmic contacts, InGaAs, Iridium, Platinum.