Simulating Drain Lag of GaN HEMTs with physics-based ASM model

P. Beleniotis1, F. Schnieder2, M. Rudolph1,2

Published in:

Proc. 15th European Microwave Integrated Circuits Conference (EuMIC 2020), Utrecht, Netherlands, Jan. 11-12, pp. 165-168 (2021).

Copyright © 2020 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Abstract:

This paper presents a drain-lag model for GaN HEMTs, enhancing the simulation accuracy of the physics-based compact model ASM-HEMT. The proposed trap model requires a minimum number of measurements and simplifies the extraction procedure by focusing only on intrinsic device related parameters. It is shown that this drain-lag description allows for highly accurate simulation of pulsed I-V output curves for the whole range of gate voltage, providing high modeling accuracy of transistor large-signal behavior without adding complexity to the existing model.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Keywords:

GaN HEMT modeling, compact model, ASM-HEMT, trapping effects, drain lag.