FBH auf der Photonics West 2018
Auf der weltweit führenden Fachmesse für Optik und Photonik stellt das FBH seine Forschungsarbeiten vor und ist auf dem German Pavilion an Stand 4529 auch vor Ort vertreten. Details und das Konferenzprogramm finden Sie auf den Seiten der Veranstalter. Beiträge des FBH auf den begleitenden Konferenzen:
BIOS
29.1.
- Shifted excitation Raman difference spectroscopy: from diode lasers to in situ applications (Invited Paper) [10509-2])
- Session 4: Plasmonics, Sensing and Bioanalytical Applications, Chair: Martin Maiwald
Lase
29.1.
- Forward development of high power diode lasers [10514-8]
- Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers [10514-9]
- 970-nm ridge waveguide diode laser bars for high power DWBC systems [10514-13]
- Compact deep UV laser system at 222.5 nm by frequency doubling wavelength-stabilized emission of a micro-integrated high-power GaN diode laser module [10516-5]
30.1.
- Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications [10513-8]
- Wavelength stabilized high pulse power laser diodes for automotive LIDAR [10514-25]
- Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration [10514-28]
- Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm [10514-32]
31.1.
- Spectrally stabilized high-power high-brightness DBR-tapered lasers in the VIS and NIR range [10518-44]
1.2.
- Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers [10513-43]
Opto
29.1.
- 633-nm single-mode master-oscillator power-amplifier module [10528-12]
- 10th-order laterally coupled GaN-based DFB laser diodes with v-shaped surface gratings (Invited Paper) [10553-7]
30.1.
- Frequency locking of compact laser-diode modules at 633 nm [10539-6]
- Pico- and nanosecond investigations of the lateral nearfield of broad area lasers under pulsed high-current excitation [10553-17]
- Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm [10553-19]
- Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser [10553-20]
- Challenges and prospects for AlGaN-based deep UV LED technologies (Invited Paper) [10554-14]
- Deep-UV LEDs emitting at 232 nm featuring low contact resistance V-based electrodes on n-Al0.9Ga0.1N [10554-17]
31.1.
- Impact of defect-generation and diffusion in deep-UV (In)AlGaN-based LEDs submitted to constant current stress [10554-35]
- Thermocompression bonding for high-power-UV LEDs [10554-46]
- Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far-field divergence [10526-52]
- Miniaturized semiconductor MOPA laser source at 772 nm for the generation of UV laser light (Poster) [10535-72]
- Reflectors and tuning elements for widely-tunable GaAs-based sampled grating DBR lasers [10553-33]
1.2.
- From heterostructure design to package: development of efficient and reliable UVB LEDs (Invited Paper) [10532-70]
- Electrical p-contacts for UV-LEDs: contact resistivity, reflectivity, and aging performance [10532-74]
- Diffraction limited 1064 nm monolithic DBR-master oscillator power amplifier with more than 7 W output power [10553-45]
- Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers [10553-46]
- 5.5 nm wavelength-tunable high-power MOPA diode laser system at 971 nm [10553-48]
- Comparison for 1030 nm DBR-tapered diode lasers with 10 W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering [10553-49]