Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Search results 4181 until 4181 of 4181
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/en/research/publications/threshold-voltage-engineering-in-gan-based-hfets-a-systematic-study-with-the-threshold-voltage-reaching-more-than-2-v
One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) in power-switching applications is obtaining enhancement mode behavior. A…