Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
Investigation of the effects of surface texturing and embedded electrode on the performance of light-emitting diodes
/en/media-center/press-releases/investigation-of-the-effects-of-surface-texturing-and-embedded-electrode-on-the-performance-of-light-emitting-diodes
Ji-Hye KangChonbuk National University/TU Berlin
Heterogene Integration von Millimeterwellen-Schaltungen in InP-SiGe BiCMOS Technologie
/en/media-center/press-releases/heterogene-integration-von-millimeterwellen-schaltungen-in-inp-sige-bicmos-technologie-1
Dr. Ina OstermayFerdinand-Braun-Institut, Berlin
Force microscopy experiments towards a control of friction
/en/media-center/press-releases/force-microscopy-experiments-towards-a-control-of-friction
Dr. Roland BennewitzINM - Leibniz-Institut für Neue Materialien gGmbH, Saarbrücken
Aufbau und Funktion des BL2000 Barrenbonders
/en/media-center/press-releases/aufbau-und-funktion-des-bl2000-barrenbonders
Juliane RieprichFerdinand-Braun-Institut, Berlin
Der Klavierstimmer für Mikrowellentechnik
/en/media-center/media-review/der-klavierstimmer-fuer-mikrowellentechnik
FBH-Spin-off Phasor Instruments sucht die beste Frequenz.
DOPS Award for PhD achievements
/en/media-center/media-review/dops-award-for-phd-achievements
On January 22, Lars Lindvold from the Danish Optical Society (DOPS) awarded the DOPS Prize 2013 to André Müller for his achievements in his thesis.
780 nm phase modulators based on GaAs – an alternative to crystal-based modulators
/en/research/research-news/780-nm-phase-modulators-based-on-gaas-an-alternative-to-crystal-based-modulators
Chip-based phase modulators allow to integrate phase control and modulation into hybrid laser and spectroscopy modules, leading to very compact and robust systems. III-V compound semiconductors are…
Development of slanted gates for AlGaN/GaN HEMTs
/en/research/research-news/development-of-slanted-gates-for-algangan-hemts
Two new process sequences for the formation of slanted gates have been developed at the FBH – the advanced gate modules are ready for integration into GaN-based HEMT and MMIC technology. They allow…
UV Laser Processing for Semiconductor Devices
/en/media-center/media-review/uv-laser-processing-for-semiconductor-devices
Highly flexible laser-assisted fabrication for gallium nitride based devices
Mit Laserpower Richtung China
/en/media-center/media-review/mit-laserpower-richtung-china
Semiconductor laser modules from the Ferdinand-Braun-Institut as door opener