FBH has developed a potential shifting driver amplifier. The compact module contains a novel inhouse GaN driver chip. It delivers a voltage gain of about 11 at a usual GaN-HEMT input load and provides a potential shift between -1.5 V and -11 V, respectively.

FBH has succeeded in fabricating nanostructures in diamond with a diameter of about 200 nm into which single quantum emitters were incorporated. These nanopillars enable the efficient collection of single photons. This is crucial for a variety of applications in quantum technology.

Novel kW-class 780 nm pump modules with near symmetric beam quality have been demonstrated, suited for high repetition rate, long-pulse applications, without micro-channel coolers – a key enabling technology for emerging high-energy-class Mid-IR lasers.

Low-inductance switching and low-thermal impedance environments are key parameters to enable GaN devices high switching speed. FBH has developed AlN power electronic modules that can serve as fundamental building blocks of large-scale plug-and-play power electronic systems.