Forschungsnews

Ion implantation can define tunnel-junction apertures in VCSELs without oxidation, but lateral proton straggle alters their effective size. By modelling this effect, we extract reliable specific resistances across different designs – without needing full layer or implantation details.

We have developed compact diode laser modules emitting at 619 nm – a wavelength crucial for quantum technologies and industrial use. These efficient, wavelength-stabilized sources enable scalable, miniaturized systems previously achievable only with complex solid-state lasers.

Our new optically guided probing method and image-analysis machine learning algorithms enable precise, fully automated on-wafer measurements of RF transistors. This approach improves probes’ position accuracy below 2 µm in measurements up to 50 GHz.