FBH recently developed highly efficient RW lasers suitable for SBC systems, used e.g. in materials processing. These bars can potentially exceed the brilliance of solid-state laser systems with high efficiencies of direct diode laser systems.

BA diode lasers are widely used in industrial materials processing. FBH scientists recently developed the extreme-triple asymmetric (ETAS) design, leading to significantly improved power conversion efficiency.

FBH has developed a new technique that utilizes processing parameters to tailor the threshold voltage and also the current density without the need for changes of the epitaxial layer sequence.

Recently, FBH has presented the first GaN-based digital sequential power amplifier module that allows to flexibly tune the efficiency over a wide output power range (6 … 12 dB) while maintaining a small form factor and a large bandwidth.

At IMS in Philadelphia and the co-located ARFTG – Microwave Measurement Conference, the FBH presented papers showing future directions towards more agile telecom systems, operating at much larger instantaneous bandwidth and at a more limited power budget.

Leistungselektronische Schalttransistoren werden zur Leistungsumwandlung eingesetzt - meist leiten sie Strom oder sperren die Spannung nur in eine Richtung. GaN-Transistoren des FBH können in beide Richtungen betrieben werden und ermöglichen so effiziente T-Typ-Umrichter.

The FBH develops sophisticated tunable diode lasers based on a MOPA concept, e.g. for frequency conversion applications. It has identified the most effective mounting and assembling process to couple the seed laser light efficiently over several lenses into the amplifier chip.

FBH is developing tunable diode lasers emitting at two individually adjustable wavelengths that separate, among others, wanted Raman from unwanted background signals. These laser sources are required for applications like absorption or Raman spectroscopy, THz frequency generation, and non-linear frequency conversion.

InP-based semiconductors exhibit outstanding cut-off frequencies and large breakdown voltages and thus provide comparably high output powers in the THz frequency range. FBH's InP MMIC process allows to transfer the epitaxial layers to various kinds of host wafer substrates.

To obtain high-performance AlGaN-based optoelectronic devices, AlN starting layers with low threading dislocation densities (TDD) are required. FBH scientists have investigated and demonstrated a promising technique to manufacture suitable AlN/sapphire templates.

The Chalmers model is one of the frequently used and well-known GaN HEMT models, featuring two implementations of capacitive effects: the capitance and the charge-based model. To achieve more precise results, both model parameters have been thoroughly analyzed.

Ps pulsed laser sources emitting in the yellow spectral range are requested for applications in life sciences. The FBH has developed very compact diode laser modules, including a 560 nm module with high peak pulse powers - at least a factor of 10 better compared to existing systems.

Such amplifiers are fundamental blocks of high-speed optical drivers, modulators, transceivers, and measurement systems. FBH has developed a stable amplifier with high linearity and low deviation from linear phase over a large bandwidth from DC to 95 GHz.

(In)AlGaN-based UV-B LEDs are promising candidates to replace established UV light sources in various applications. However, high defect densities in these materials, among others, limit their efficiency. The FBH has therefore studied the influence of EBL doping and EBL material composition on the emission power of 310 nm LEDs.

The FBH develops highly sensitive, fast-response and broadband THz detectors for CW and pulsed operation. Since fast THz cameras with high sensitivity are mandatory for many industrial applications, FBH is also working on focal plane arrays of THz detectors to transfer the excellent single detector performance to a THz camera.

Spaceborne quantum optical sensors for high-precision measurements rely on compact and robust narrow linewidth laser systems. The radiation hardness of the VHBGs which enhance the frequency stability of the employed laser modules was shown by FBH for typical low-earth-orbit conditions.

Improvements regarding the lateral beam quality of GaAs-based BA diode lasers strongly depend on the lateral temperature profile within the laser chip. FBH has recently made progress in understanding the effects regulating this profile.

For GaN-based DFB laser diodes, specific etching processes are required to realize laterally coupled surface gratings with high reflectivity. At FBH, a suitable ICP etch process was developed to fabricate laterally coupled 10^th order surface gratings.

Microwave plasmas can be used for a variety of applications. Accurate knowledge of their electrical behavior is indispensable to achieve high power output and efficiency. The FBH has developed a measuring method for precise characterization and a novel non-linear plasma model.