FBH's RF Power Lab had several presentations at IMS2017, among them discrete level supply modulated systems with extended bandwidth and improved efficiency, an evelope tracking system for space applications, and PAs with discrete dynamic load modulation.

Al_xGa_1-xN-based metal-semiconductor-metal photodetectors (MSM PDs) are very attractive for the detection of ultraviolet radiation. We investigated the degradation behavior of bottom-illuminated MSM PDs to identify the dominant degradation mechanisms.

are attractive light sources for industrial and biomedical sensor applications. Recently we have realized a single aperture SG-DBR laser and demonstrated 20 nm wide, current-controlled tuning around a center wavelength of 976 nm.

Device modeling is crucial for circuit design, thus improving device design and fabrication process. Recent advances in physical device modeling of our in-house transferred substrate InP/InGaAs double heterostructure transistors for THz applications are leading to refined device models.

Modeling the trapping effects of widely used GaN HEMTs remains a key issue. FBH's approach allows to derive an optimized set of parameters sensitive to trap states, enabling optimum large signal simulation accuracy for standard models.

Diode laser bars emitting in the 9xx nm range are the preferred light sources for a wide range of industrial and scientific high-power applications. Recent progress at the FBH in epitaxial layer design enables high efficiency in bars with long resonators, as needed for very high power applications.

True vertical inversion type GaN MISFETs have been realized at FBH that demonstrate a promising technological baseline towards larger periphery vertical GaN MISFET devices for power electronics applications.

FBH has developed optimized AlGaN UV photodetectors with high EQE values at very low bias voltages under bottom illumination conditions by combining sufficiently thin absorber layers and geometrically asymmetric electrode schemes.

Gallium oxide is a promising ultra-wide-bandgap semiconductor for future high-voltage power electronics applications due to its outstanding material properties. FBH has now successfully demonstrated transistors revealing the potential of this new material.

FBH is developing compact laser modules with very narrow linewiths suitable for future applications of quantum technologies. Besides advanced DFB laser diodes, passive optical micro components are subject of intense research at FBH.

AlGaN-based UV LEDs are promising devices for a variety of applications such as water purification, gas sensing, and UV curing. FBH investigations open up new possibilities for degradation studies in UV LEDs for subsequent optimization.

Frequencies beyond 300 GHz have been identified as an important frequency range for a variety of applications including future high-speed communications, radar sensors and imaging systems