Forschungsnews

In an era of ever-growing data demand – driven by 5G, Industry 4.0 and the Internet of Things – power delivery must keep pace. Our GaN buck converter hits 200 MHz switching, enabling a minimal footprint and up to 80 % efficiency for next-generation data centers.

We investigated the efficiency drop in far-UVC LEDs with different emission wavelengths. Our analysis paves the way for performance improvements, advancing the applicability of these devices.

Our novel quantum sensor spatially and temporally resolves electric fields and single charges at the atomic and nanosecond scale, enabling unprecedented insights into charge dynamics of solid-state materials.

We have developed powerful diode laser sources emitting in the Watt-level range at 720 nm. These lasers enable novel quantum interferometry-based sensing for cancer diagnostics.

FBH’s new near-infrared monolithic Y-branch diode lasers provide tunable dual-wavelength laser emission. This enables continuous-wave THz radiation via photomixing, advancing compact THz spectroscopy.

Efficient power electronic converters need high blocking strength and low on-state resistance. We demonstrate successful laser lift off based transfer of vertical GaN pn-diodes from sapphire to tungsten, enabling true vertical conduction and reducing resistance by half.

Blue-violet emitting laser diodes tend to form SiO_x deposits on the facet, causing unstable laser thresholds and beam characteristics. A suited facet coating, together with a hermetically sealed TO can, can avoid this effect and enable complex optical applications.

We demonstrate that high-temperature PECVD SiNx passivation layers enable controlled stress engineering in GaN-HEMTs. Our approach specifically shifts the threshold voltage up to 1.4 V, supporting the development of tailored transistors for future applications.

Using in-situ and ex-situ optical metrology, we have optimized VCSEL growth and etching processes. This ensures precise layer control, aligning emission wavelengths efficiently and enabling “first time right” production of these complex devices for space applications.

We have developed a highly scalable 400 nm InP HBT process with f_max> 500 GHz. The technology offers precise control, consistent performance, and improved efficiency, contributing to advancements in high-frequency communication systems.

We have proposed a new design for a photonic crystal surface emitting laser diode (PCSEL). Our approach enables high-efficiency generation of multi-Watt optical power in a narrow circular beam, using an all-semiconductor photonic crystal structure.

Simple yet precise trap characterization is crucial for optimizing device and model performance. At FBH, we have developed an innovative characterization technique using MHz load-line measurements to accurately analyze trapping effects under real-world conditions.

We’ve developed a novel micro-integrated quantum interferometer module, using entangled photons to detect microplastics in water. This compact, efficient technology enables mobile, cost-effective microplastic detection, addressing environmental and health concerns.