Forschungsnews

Raman spectroscopy can determine the chemical composition of milk. We use an in-house developed 785 nm dual-wavelength diode laser and SERDS to successfully identify major milk ingredients and to determine the milk fat content within seconds.

We demonstrate a compact optical frequency reference using a novel 778.1 nm laser. Promising results indicate the feasibility of micro-integrating these references into matchbox-sized units for field and space applications.

Our high-speed transistors are promising candidates for future wireless communication applications. We develop robust characterization techniques to extract reliable transistor parameters through 3D electromagnetic simulations and precise on-wafer measurements.

Emerging technologies demand for precise control over film thickness and material properties. At FBH, we provide a platform for obtaining conformal dielectric layers with atomic-scale precision and control, addressing the increasing demands for future device landscapes.

We have developed a new 500 W diode laser module concept, tailored for pumping Yb-doped fiber lasers at 976 nm. The module uses FBH’s DBR-stabilized double emitters in their proprietary side-cooled stacks, enabling a very simple and cost‑efficient module design.

With a new pick-and-flip station and an upgraded die-bonder for automatic picking from 8” dicing frames, our mounting and assembly department is set for future tasks. The upgrade improves handling of sensitive chips from larger wafers for our increasingly complex projects.

We model Bragg gratings in semiconductor ridge waveguides and use AI to predict their optical responses for custom laser designs in quantum sensing. Our research tackles AI training on small, informative datasets from precise simulations, enabling efficient designs.

A narrow linewidth laser source in the blue-violet spectral range enables various applications, such as non-linear frequency conversion and atomic clocks. We demonstrate such a system using GaN-based laser diodes developed entirely in-house.

Our innovative concept combines an LNA with integrated switching functionality and a true digital class-E power amplifier based on FBH’s GaN technology. Serving a wide bandwidth, our approach enables efficient ICT solutions.

Material analytics develops, tests, and applies methods for semiconductor layer quality characterization. We have verified a defect-sensitive etching method’s accuracy in determining dislocation densities for AlGaN semiconductors in the whole composition range.

Emerging from our latest advancements, our epitaxial structures now emit at 626 nm, even at room temperature. Moreover, they provide the capability to tune the emission wavelength towards even shorter wavelengths.

Achieving high blocking strength and low on-state resistance simultaneously is essential for efficient power electronic converters. The relationship between blocking strength, thick epitaxial drift region, and their dislocation density is demonstrated.

Imaging weak magnetic fields as produced by electric pulses that propagate through nerves requires complex and expensive devices. With our on-chip multi-pixel sensor, we have developed a novel paradigm for simple magnetic field imaging for life and material sciences.

Raman spectroscopy can determine the chemical composition of textile samples. We use an in-house developed 785 nm dual-wavelength diode laser to successfully distinguish between dyed and undyed textiles made from, e.g., cotton, viscose, wool, and polyester.

Joint research activities between University of Duisburg-Essen and FBH yield improved performance of InP-based technologies. These rely on optimized epitaxial material and novel process techniques. Learn more about this unique collaboration.

Sophisticated etch processes are required to fabricate high-power diode lasers with excellent performance. We explain exemplarily how to control the etch depth in-situ and why the measuring wavelengths of the interferometer must be adapted to the material properties.

For the first time, FBH has developed wavelength-stabilized DFB broad-area lasers with multiple epitaxially stacked active regions and tunnel junctions. They are designed for emission around 900 nm to generate high-power nanosecond pulses.

High-resolution spatial measurements uncovered the origin of unwanted parasitic emission at long wavelengths from UVC LEDs. We are now able to implement targeted changes to the manufacturing process, thus increasing LED emission power and spectral purity.

After comprehensive technological optimizations, our 226 nm UV LEDs are now ready for use in nitrogen oxide detection. The fabricated devices with an output power in the milliwatt range lay the foundation for significantly more compact sensing systems.

Researchers have developed a roadmap outlining the current state and future prospects of focused ion beam (FIB) technology. FIB instruments are universal tools for all areas of research, including comprehensive analyses and rapid prototyping.