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Toward complex GaAs PIC-based laser sources

J.-P. Koester*, O. Brox*, H.Wenzel*, J. Fricke, P. Della Casa, A. Maaßdorf, and A. Knigge

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Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-4-4 (2023).


Diode lasers (DLs) based on gallium arsenide (GaAs) enable direct emission from 630 nm up to 1180 nm [1], a wavelength range that is of interest for a wide range of applications in metrology, spectroscopy [2], and quantum photonics [1]. However, most of these applications require tailored lasers beyond standard Fabry-Pérot cavities to achieve e.g. narrow linewidths [1], multiple wavelengths [2,4], and tunable wavelength emission [3].

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
* These authors contributed equally

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