Studies of limitations to peak power and efficiency in diode lasers using extreme-double-asymmetric vertical designs
T. Kaul, G. Erbert, R. Platz, A. Maaßdorf, S. Knigge and P. Crump
Published in:
25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan, Sep. 12-15, p. WD4 (2016).
Abstract:
High power diode lasers with novel extreme-double-asymmetric epitaxial designs with increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) at high continuous wave heatsink temperature (75°C), attributed to the effective suppression of power saturation mechanisms. Prospects for increased performance via further increased Γ are analyzed.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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