Reliable high-power InGaAs/AlGaAs ridge waveguide laser diodes
G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies, and H. Wenzel
Published in:
Conf. on Lasers and Electro-Optics (CLEO Europe), Glasgow, UK, Sep. 14-18, CTuI36 (1998).
Abstract:
In application of RW laser diodes with monomode emission, like pumping sources for fibre amplifiers in optical communication systems, very high output powers are desirable. During the last years, remarkable success has been achieved to stabilize the facets of InGaAs/AlGaAs diodes, with emission wavelengths of about 1 µm, what allowed the production of highly reliable lasers. But along with these efforts, a lot of work has been done for further enhancement of device stability by replacing AlGaAs with Al-free materials. We show here, that the “pure" AlGaAs structures itself allows best performance at output powers of 300 mW.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany
Related Topics:
Diode lasers; Indium gallium arsenide; Laser applications; Optical amplifiers; Optical communications; Optical systems
Copyright © 1998 IEEE
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