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Progress in efforts to increase power in GaAs-based high-power diode lasers

P. Crump, M. Elattar, M.J. Miah, J. Fricke, O. Brox, D. Martin, P. Della Casa, A. Maaßdorf , H. Wenzel, A. Knigge and G. Tränkle

Published in:

28th International Semiconductor Laser Conference (ISLC 2022), Matsue, Japan, Oct. 16-19, ISBN: 978-4-88552-335-9, TuA-01 (2022).

Abstract:

Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown lateral blocking. In parallel, power is increased by transitioning more laser types to highly asymmetric designs, illustrated with 970nm grating-stabilized bars.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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