Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
S. Kölle1, F. Römer1, G. Cardinali2, A. Schulz2, N. Susilo2, D. Hauer Vidal2, T. Wernicke2, M. Kneissl2,3, and B. Witzigmann1
Published in:
IEEE Photonics J., vol. 16, no. 2, art. 0601105, doi:10.1109/JPHOT.2024.3379231 (2024).
Abstract:
Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells.
1 Institute for Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91052 Erlangen, Germany
2 Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany
3 Ferdinand-Braun-Institute (FBH), 12489 Berlin, Germany
Index Terms:
Simulation, quantum well lasers, optoelectronic devices, aluminum gallium nitride.
©2024 The Authors. This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License. For more information, see creativecommons.org/licenses/by-nc-nd/4.0/
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