On-Wafer 16-Term Calibration for Characterization of InP HBTs Featuring Sub-THz fmax
A. Kanitkar#, R. Doerner#, T.K. Johansen$, W. Heinrich#, T. Flisgen#*
Published in:
Proc. 55th European Microwave Conference (EuMC 2025), Utrecht, Netherlands, Sep. 23-25, ISBN: 978-2-87487-081-1, pp. 687-690 (2025).
Abstract:
In this paper, InP HBTs featuring maximum oscillation frequencies fmax in the sub-THz range are characterized by conducting on-wafer 16-term calibration. A direct comparison between 8-term calibration and 16-term calibration demonstrates that the 16-term calibration improves the way transistor Mason’s gain is derived. The on-wafer measurements of transistors with emitter widths of 0.5 μm and 0.85 μm yield extracted fmax values of 0.44 THz and 0.33 THz, respectively. The study shows that choosing proper on-wafer calibration techniques is highly important for reliable transistor characterization.
# Ferdinand-Braun-Institut (FBH), Germany
$ Technical University of Denmark, Denmark
* Brandenburg University of Technology (BTU), Germany
Keywords:
hyperthermia, mEHT, treatment, HCT116, radiofrequency, modulation, wideband.
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