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Nonlinear modeling of SiGe HBTs up to 50 GHz

C.N. Rheinfelder1 F.J. Beißwanger2, and W. Heinrich1

Published in:

IEEE Trans. Microwave Theory Tech., vol. 45, no. 12, pp. 2503-2508 (1997).

Abstract:

A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz.

1 Ferdinand–Braun-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Daimler–Benz AG, Forschungszentrum Ulm, 89081 Ulm, Germany

Index Terms:

Heterojunction bipolar transistors, microwave bipolar transistors, nonlinear circuits, nonlinear modeling, silicon germanium.

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