Nonlinear modeling of SiGe HBTs up to 50 GHz
C.N. Rheinfelder1 F.J. Beißwanger2, and W. Heinrich1
Published in:
IEEE Trans. Microwave Theory Tech., vol. 45, no. 12, pp. 2503-2508 (1997).
Abstract:
A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure which is insensitive to tolerances in measurement data. The model yields excellent accuracy for dc and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design at 26 and 38 GHz.
1 Ferdinand–Braun-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Daimler–Benz AG, Forschungszentrum Ulm, 89081 Ulm, Germany
Index Terms:
Heterojunction bipolar transistors, microwave bipolar transistors, nonlinear circuits, nonlinear modeling, silicon germanium.
© 1997 IEEE
Rightslink® by Copyright Clearance Center
Full version in pdf-format.